![DBME17H2PFA222 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | DBME17H2PFA222-ND |
Manufacturer Part#: |
DBME17H2PFA222 |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | ITT Cannon, LLC |
Short Description: | COMBO 17W2 M PCB R/A HP ZINC |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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The DBME17H2PFA222 is a semiconductor that can be found in a variety of electronics. It is designed to handle higher power levels than many other components and is often used for high-power switching applications. In this article, we will discuss the application field and working principle of the DBME17H2PFA222.
Applications
The DBME17H2PFA222 is used in a variety of applications. As a high-power switching device, it can be found in electric motor controllers, power converters, welding equipment, and more. It can also be used as a switching transistor in power electronics, allowing it to be used in a wide range of applications.
In particular, the DBME17H2PFA222 can be used in automotive applications. This is because it is designed to handle higher power levels compared to other components, which makes it suitable for car electronics that require higher voltage and power levels. Furthermore, it is also capable of handling high-frequency switching, which makes it ideal for controlling high-speed motors in modern cars.
Working Principle
The DBME17H2PFA222 is an NPN bipolar transistor, meaning it is composed of two p-type layers and one n-type layer. When it is used in a circuit, current flows through both the emitter and collector terminals. By applying a voltage to the base electrode, the flow of current between the emitter and collector is controlled, allowing the DBME17H2PFA222 to act as a switch.
This transistor operates by manipulating the flow of electrons and holes through the base-emitter junction. When the base-emitter voltage is increased, more electrons from the n-type layer will be able to flow to the p-type material. This creates an excess of electrons, which increases the current flow between the emitter and collector. Conversely, when the voltage is decreased, fewer electrons will flow from the n-type layer, reducing the current between the emitter and collector.
The DBME17H2PFA222 can handle higher power levels compared to other transistors, making it well-suited for higher-power applications. This is due to its higher current carrying capacity, as well as its ability to handle a wider range of input voltages.
Conclusion
The DBME17H2PFA222 is a semiconductor that is often used for high-power switching applications. Its application field includes electric motor controllers, power converters, and welding equipment. Additionally, it can also be used in automotive applications due to its ability to handle higher power levels and higher frequency switching.
The working principle of the DBME17H2PFA222 involves manipulating the flow of electrons and holes through the base-emitter junction. When the voltage is increased, more electrons flow from the n-type layer, increasing the current flow between the emitter and collector. Conversely, when the voltage is decreased, fewer electrons will flow, reducing the current between the emitter and collector. This semiconductor can also handle higher power levels than other components, making it ideal for higher-power switching applications.
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DBME21W1P | ITT Cannon, ... | 14.55 $ | 1000 | CONN D-SUB PLUG 21POS PNL... |
DBME17W2P | ITT Cannon, ... | 12.87 $ | 1000 | CONN D-SUB PLUG 17POS PNL... |
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