DDB2U30N08VRBOMA1

Series:	--
Part Status:	Not For New Designs
IGBT Type:	--
Configuration:	3 Independent
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	25A
Power - Max:	83.5W
Vce(on) (Max) @ Vge, Ic:	2.55V @ 15V, 20A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	880pF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<h2>DDB2U30N08VRBOMA1 - An Overview</h2><p>DDB2U30N08VRBOMA1 is the type of insulated gate bipolar transistors (IGBTs) modules utilized in high current and voltages industrial applications. Though similar to bipolar junction transistors, insulated gate bipolar transistors (IGBTs) offer higher switching speeds, higher efficiency and more versatility, making them ideal for a range of industrial usages.</p><h3>What is an IGBT?</h3><p>An IGBT is an insulated gate bipolar transistor, which is a solid state electronic device. It’s made up of two insulated gate field-effect transistors, or IGFETs, connected to a single terminal. IGBTs are constructed from a single piece of semiconductor material, making them energy efficient and capable of carrying high power.</p><h3>Application Field of DDB2U30N08VRBOMA1</h3><p>DDB2U30N08VRBOMA1 is an insulated gate bipolar transistor module ideal for use in a variety of industrial applications. It has a peak load current of 30 Amps and a voltage rating of 800 Volts. Its modular construction and design make it very efficient and reliable in industrial usage situations. It is often used in applications such as motor control, inverter power supplies, electric vehicles, motor drives, renewable energy systems, renewable energy sources, and high current switchgear. </p><h3>Working Principle of DDB2U30N08VRBOMA1</h3><p>DDB2U30N08VRBOMA1 works by combining the principle of an insulated gate field-effect transistor with the conventional bipolar transistor. The working principle of an IGBT involves controlling the current by turning off the gate source voltage, thus making it easier to obtain high-power conversion efficiency. The insulated gate keeps the current through the device low while allowing high switching speeds. To control the current, the gate voltage is reduced, allowing the device to function at a low level without applying a voltage that could damage the system.</p><p>When the gate voltage is increased, the current in the device increases. This causes a rapid increase in temperature that is then dissipated by conduction, creating an efficient and fast response to the desired control parameters. By utilizing the low-voltage source, DDB2U30N08VRBOMA1 provides a low power supply with a stable operation.</p><p>In addition, the combination of the insulated gate bipolar transistors and the gate source voltage provide reliable overcurrent protection, making it suitable for continual use. The combination of high efficiency and low power consumption makes the DDB2U30N08VRBOMA1 highly suitable for a range of industrial applications.</p><h3>Conclusion</h3><p>In conclusion, the DDB2U30N08VRBOMA1 is an insulated gate bipolar transistor module that is ideal for use in a variety of industrial applications. Its high efficiency and low power consumption make it an excellent choice for a range of industrial applications. Its working principle is based on the principle of an insulated gate field-effect transistor and its modular construction enables the device to provide reliable overcurrent protection. In addition, its low-voltage source and high-speed switching capabilities make it suitable for a range of applications.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description