DDZX9V1C-7

Diodes - Zener - Single

A DDZX9V1C-7 is a single zener diode that has a wide range of applications. Because it is a single device it can be beneficial in situations where heat generation and space utilization or two factors to consider.

Structure and Characteristics

The DDZX9V1C-7 is a single device with a glass-encapsulated body and a small size. It is available in small glass packages with 1 mm tall case and 0.4 mm thick case (SOD523). The diode is composed of a high purity silicon wafer and P type epitaxial layer on a n-type substrate. Its dominant carrier conduction is formed by a statistically distributed barrier reverse biased from the n-type substrate.

The current-voltage characteristics of the DDZX9V1C-7 are described by the Gummel-Poon model, which is a derived mathematical representation of the physical dynamics of the device and which is consistent with the underlying principles of operation.

This device also has a wide range of operating parameters, such as forward voltage, zener breakover voltage (ZBV) and junction temperature. Its performance is stable over temperature, making it suitable for a variety of applications.

Applications

The applications of the DDZX9V1C-7 are plentiful due to its various attributes. It can be used as a voltage reference, an over-voltage protection device, a current regulator, and an ESD protection device.

Its small size is beneficial in low-power-consumption, compact applications such as consumer electronics and portable medical devices. Its low forward voltage is beneficial in power circuits where it can reduce power losses and improve conversion efficiency. Its robust construction and wide temperature range make it suitable for outdoor applications and in environments subject to extreme temperatures, shocks and vibration.

Working Principle

The DDZX9V1C-7 is a voltage-dependent device. When it is forward-biased, a current flows in the anode-cathode direction. When the voltage is increased beyond the Zener breakover voltage, the current flows in both the forward and reverse directions. This is known as "Zener breakdown," which is the principle of operation for the device.

When Zener breakdown occurs, a large electric field is established between the anode and cathode, which increases rapidly as the magnitude of the applied voltage is increased. This electric field causes electrons to be swept from the n-type substrate and holes from the p-type epitaxial layer, resulting in a large current flow in the reverse direction. The magnitude of the reverse current is determined by the Zener breakdown voltage.

Conclusion

The DDZX9V1C-7 is a single zener diode with a wide range of applications and characteristics. It has a high-purity silicon wafer and a P type epitaxial layer on an N-type substrate. Its performance is stable over temperature and its forward voltage is low, making it beneficial in power circuits. The device is used as a voltage reference, an over-voltage protection device, a current regulator, and an ESD protection device. Its principle of operation is Zener breakdown.