DF1400R12IP4DBOSA1 Allicdata Electronics
Allicdata Part #:

DF1400R12IP4DBOSA1-ND

Manufacturer Part#:

DF1400R12IP4DBOSA1

Price: $ 446.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 1400A
More Detail: IGBT Module Trench Field Stop Single Chopper 1200V...
DataSheet: DF1400R12IP4DBOSA1 datasheetDF1400R12IP4DBOSA1 Datasheet/PDF
Quantity: 1000
2 +: $ 405.84600
Stock 1000Can Ship Immediately
$ 446.43
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single Chopper
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 1400A
Power - Max: 7700W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 82nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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DF1400R12IP4DBOSA1 is a member of the advanced family of IGBT (Insulated Gate Bipolar Transistor) modules. This type of module is the preferred type of transistor for applications requiring high output power and high efficiency. This article will detail the application field and working principle of the DF1400R12IP4DBOSA1 IGBT module.
The IGBT module is commonly used in a wide range of applications, from simple switch mode power supplies to more complex automotive and industrial applications, such as electric motors, forklifts and elevators. High power applications such as Uninterruptible Power Supplies (UPS) and solar power inverters also often make use of IGBT modules. The module is especially popular in applications that require high power levels combined with high enough switching frequency, as it offers both cost-effective and reliable switching performance.
IGBT modules are composed of both an insulated gate and a bipolar transistor. The gate is a diode that is connected to an electric field to control the switching action of the transistor. The insulated gate of the module prevents electric current flow between the gate and the collector, allowing better control of the flow of electric current through the transistor. IGBT modules can be configured to switch current flows ranging from tens of microamperes to hundreds of amperes, making them suitable for a wide range of applications.
The DF1400R12IP4DBOSA1 IGBT module is particularly suitable for applications where high power output is required, as it has an output power of up to 1400 watts and a switching frequency of 1200 Hz. The module is also equipped with a built-in snubber, which reduces the over-switching losses of the IGBT, increasing efficiency and prolonging the life of the module.
In summary, the DF1400R12IP4DBOSA1 IGBT module has a wide range of applications, from simple switch mode power supplies to more complex industrial and automotive applications, and from Uninterruptible Power Supplies (UPS) to solar power inverters. It is particularly suitable for high power applications requiring high output power and high efficiency, with an output power of up to 1400 watts and a switching frequency of 1200 Hz. The module’s built-in snubber helps to further increase efficiency and prolong the life of the module, making it a reliable and cost-effective solution for applications requiring IGBT technology.

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