![DF160R12W2H3FB11BPSA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | DF160R12W2H3FB11BPSA1-ND |
Manufacturer Part#: |
DF160R12W2H3FB11BPSA1 |
Price: | $ 74.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD DIODE BRIDGE EASY2B-2-1 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | ![]() |
Quantity: | 1000 |
15 +: | $ 67.99280 |
Specifications
Series: | EconoPACK™2 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 40A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 20A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2.35nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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DF160R12W2H3FB11BPSA1 Application Field and Working Principle
Introduction
DF160R12W2H3FB11BPSA1 is a series of insulated gate bipolar transistor (IGBT) power modules developed by Infineon Technologies for use in a variety of applications. It is designed for short-circuit current-handling capability and ruggedness, is designed to deliver high levels of power and efficiency, and features low total system cost. The DF160R12W2H3FB11BPSA1 power module series is suitable for a wide range of applications, including Power Factor Correction (PFC) converters, Uninterruptible Power Supplies (UPS), servers, lighting, motor drives, and robotic systems.Application Field
The DF160R12W2H3FB11BPSA1 is optimized for medium-voltage traction inverters, used in high-power railway applications such as metro trains, light rail, and freight locomotives. It is designed to provide the needed levels of power, efficiency, and reliability needed to perform in such systems. It offers improved thermal performance, higher current-handling capability, and a rugged design which allows it to withstand harsh environments.It is also used in medium-voltage motor drives and robotics, using a scalable architecture that allows it to be applied to a wide variety of different motor sizes and types. The module is well-suited for medium-voltage 3-phase motor drives, brushless DC (BLDC) motor drives, and Permanent Magnet Synchronous Motors (PMSMs) due to its wide range of operational ratings.In addition, DF160R12W2H3FB11BPSA1 is also designed for use in high-power server applications. This series has up to 30 kW of power and is designed to ensure a stable and reliable power supply for points of sale (POS) systems, retail, banking, vending machines, and other server applications.Working Principle
The operation of theDF160R12W2H3FB11BPSA1 power module is based on the principles of insulated gate bipolar transistor (IGBT) technology. This technology combines the advantage of both bipolar transistors and insulated gate field effect transistors (MOSFETs) into a single power device.It utilises a four-terminal structure with a controlled gate voltage to switch the device quickly and precisely. When the gate voltage is low, the IGBT behaves like a normal MOSFET and it is turned fully on. When the gate voltage is high, the IGBT is turned fully off. By controlling the voltage on the gate, the IGBT can be fully turned on or off, or it can be partially turned on.The DF160R12W2H3FB11BPSA1 power module has low switching losses and fast switching speed, making it suitable for use in power electronics where fast switching is required. The module is optimised for low switching losses and fast switching speed and offers improved temperature control, overvoltage protection, and short-circuit current-handling capability. This makes it suitable for applications that require high power, efficiency, and reliability.Conclusion
DF160R12W2H3FB11BPSA1 is a series of IGBT power modules developed by Infineon Technologies for use in a variety of applications, including traction inverters, motor drives, robotics, and server applications. Its operation is based on the principles of IGBT technology, which combines the advantage of both bipolar transistors and insulated gate field effect transistors (MOSFETs) into a single power device. It is optimised for low switching losses and fast switching speed, is designed for robustness and high current-handling capability, and features overvoltage and temperature protection. Therefore, the DF160R12W2H3FB11BPSA1 is a suitable choice for applications that require high power, efficiency, and reliability.The specific data is subject to PDF, and the above content is for reference
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