DF300R07PE4B6BOSA1 Allicdata Electronics
Allicdata Part #:

DF300R07PE4B6BOSA1-ND

Manufacturer Part#:

DF300R07PE4B6BOSA1

Price: $ 108.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 650V 300A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: DF300R07PE4B6BOSA1 datasheetDF300R07PE4B6BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 99.07520
Stock 1000Can Ship Immediately
$ 108.98
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 300A
Power - Max: 940W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 18.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The DF300R07PE4B6BOSA1 is an insulated gate bipolar transistors (IGBTs) module. It is a three phase, six-pack module, meaning that it has three N-type IGBTs and three reverse-parallel P-type diodes for each phase. The device is intended for applications that require high voltage, high-current outputs like renewable energy systems, electric drive systems, PLCs (Programmable Logic Controllers) and uninterruptible power supplies (UPS).

The DF300R07PE4B6BOSA1 is a highly efficient component, offering a wide range of power output with low power losses and low input voltage requirements. It also has a low stray inductance, making it suitable for fast switching applications.

The working principle of the DF300R07PE4B6BOSA1 is the same as that of any electrical semiconductor device. An electric current passes through two terminals, called the emitter and collector. When an electric potential is applied across the two terminals, this induces current flow between them. The current that passes through the transistor is controlled by a third connection, known as the gate. By altering the voltage on the gate, the current flow can be altered.

The DF300R07PE4B6BOSA1 does not require a heatsink, as the module is designed to dissipate heat efficiently. This makes the module well suited for applications where the use of a heatsink is impractical or not possible. In addition, the module uses a low stray inductance which allows for fast switching operations.

The DF300R07PE4B6BOSA1 is suited for high voltage and high current applications, such as electric vehicle and drive systems, uninterruptible power supplies, and renewable energy systems. The device offers higher power efficiency and higher levels of safety compared to other modules such as transistors, MOSFETS and thyristors. In addition, the DF300R07PE4B6BOSA1 has excellent thermal characteristics, and is designed to withstand extreme temperatures and vibration, making it ideal for demanding applications.

In conclusion, the DF300R07PE4B6BOSA1 is an IGBT module that is suited for high voltage, high current applications. It is an efficient and reliable device, offering good features such as low power losses, low gate control voltage, low stray inductance, and excellent thermal characteristics. The device is suitable for both on and off-board applications, making it a great choice for users in need of a reliable and efficient device for their project.

The specific data is subject to PDF, and the above content is for reference

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