DF900R12IP4DBOSA1

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The DF900R12IP4DBOSA1 is an OptiMOS™ semiconductor device that belongs to the family of power transistors known as insulated-gate bipolar transistors (IGBTs). It integrates both MOSFET and bipolar junction transistor (BJT) structures into its structure to provide high power switching performance and allow for higher temperature operation.

The DF900R12IP4DBOSA1 is a voltage package module in a normal flat-pack style, that consists of an IGBT chip with a reverse conducting diode, integrated onto a power baseplate. It also integrates a protection diode for increased safety in an extreme fault condition.

DF900R12IP4DBOSA1 devices are well-suited for use in applications such as general motor drives, AC drives, UPS systems, welding machines, power converters, power supplies and other industrial applications.

Application Field

The DF900R12IP4DBOSA1 is especially suitable for applications requiring high current drives including motors and power converters, as well as in highly temperature-sensitive applications such as power electronics, medical equipment and automotive assembly lines. It is also ideal for applications where efficiency and reliability are key, particularly in high power applications where long-term reliability is of utmost importance.

Working Principle

The OptiMOS™ technology used in the DF900R12IP4DBOSA1 integrates an IGBT and a reverse-conducting diode onto a power baseplate. This means only one voltage package module is needed which is much more space efficient. The integrated IGBT works as regular MOSFETs in the linear region and is controlled on-state duration with a gate control signal.

At turn-off, the optimized dynamic performance of the IGBT results in fast and soft recovery of the reverse conducting diode, minimizing the braking energy losses. In addition, the reverse conducting diode is optimized to minimize the reverse recovery current and voltage losses. The IGBT also contains a wide body diode to enable a commonly used “anti-shoot-through” topology in power converters.

The OptiMOS™ technology provides superior temperature operating range and limiting current values achieved through chip design and process optimization. Its integrated back-gate clamp ensures that all terminals including the gate remain protected from voltage spikes which allows for higher system reliability.

The DF900R12IP4DBOSA1 is a truly green device with optimised power dissipation, power density and package size. It allows for increased safety by incorporating a protection diode and ensures efficient operation, thanks to its high voltage handling capabilities and fast soft recovery times.

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