Allicdata Part #: | DGTD65T15H2TFDI-ND |
Manufacturer Part#: |
DGTD65T15H2TF |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | IGBT600V-XITO-220AB |
More Detail: | IGBT Field Stop 650V 30A 48W Through Hole ITO-220A... |
DataSheet: | DGTD65T15H2TF Datasheet/PDF |
Quantity: | 757 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.05840 |
10 +: | $ 0.95004 |
100 +: | $ 0.76356 |
500 +: | $ 0.62733 |
1000 +: | $ 0.51978 |
Switching Energy: | 270µJ (on), 86µJ (off) |
Supplier Device Package: | ITO-220AB |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 150ns |
Test Condition: | 400V, 15A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/128ns |
Gate Charge: | 61nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 48W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 60A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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The most common application of the DGTD65T15H2TF transistor is in the switching of high voltage and power applications such as inverter circuits, AC and DC motor drives, and lighting controls. It is able to handle high voltages ranging from 30 to 1200 volts and can switch up to 50A of current. Its low on-state voltage drop makes it an efficient and reliable choice for these applications.
The operation of the DGTD65T15H2TF transistor is based on the principle of an insulated gate bipolar transistor (IGBT). It contains an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) between the collector and emitter of the transistor. At the gate, this MOSFET is connected by an insulated gate and the gate voltage is controlled to control the size of the conductive channel between the collector and emitter. The metal-oxide-semiconductor field-effect transistor (MOSFET) provides the transistor with high input impedance and low input current.
The main advantage of the DGTD65T15H2TF is its high efficiency and low loss. Compared to other types of transistors, IGBTs have a much lower voltage drop at the same current level, making them more efficient and reliable. Furthermore, the low gate drive voltage makes them ideal for applications requiring low switching noise and low voltage variation.
Due to the above mentioned characteristics, the DGTD65T15H2TF is widely used in various applications such as frequency converters, DC-DC converters, power supplies, and inverter circuits. It is ideal for switching various high voltage and power applications that require low noise, low voltage variation and high efficiency.
In conclusion, the DGTD65T15H2TF is an IGBT (Insulated Gate Bipolar Transistor) transistor that is classified as a type of single transistor. It has a wide range of applications in both industrial and consumer settings and is known for its reliable performance. It operates by controlling the size of the conductive channel between the collector and emitter of the transistor by controlling the gate voltage. This allows it to handle high voltages and power applications with low noise, low voltage variation and high efficiency, which makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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