DM80-01-3-9130-3-LC Allicdata Electronics
Allicdata Part #:

DM80-01-3-9130-3-LC-ND

Manufacturer Part#:

DM80-01-3-9130-3-LC

Price: $ 0.00
Product Category:

Optoelectronics

Manufacturer: Finisar Corporation
Short Description: LASER DIODE 1567NM 13-BUTTERFLY
More Detail: Laser Diode 1567nm 2.511mW 1.8V 100mA 13-Butterfly
DataSheet: DM80-01-3-9130-3-LC datasheetDM80-01-3-9130-3-LC Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Wavelength: 1567nm
Moisture Sensitivity Level (MSL): --
Voltage - Input: 1.8V
Current Rating: 100mA
Power (Watts): 2.511mW
Package / Case: 13-Butterfly
Description

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Laser Diodes, Modules

The DM80-01-3-9130-3-LC is a high-performance laser diode module developed by American photonics manufacturer Lasermate. This model of laser diode is capable of emitting up to 15mW of power at 780nm and features a low threshold voltage with a fast response time. It is primarily used in medical, scientific, and industrial applications.

Application Fields

Due to its characteristics and parameters, the DM80-01-3-9130-3-LC laser diode module is used for a variety of applications. In the medical field, it is used as a surgical tool in laser-assisted surgeries and for tissue ablation. In the scientific field, it is used for scanning objects, measuring distances, and conducting experiments. In the industrial field, it is used in processes such as laser welding, high-volume industrial cutting, and marking and engraving on material surfaces.

Working Principle

To understand the working principle of a laser diode module, it is best to start with the way a laser diode works. A laser diode is an Electronic-Optical device that emits a narrow beam of coherent electromagnetic radiation when a voltage is applied across the device. The emission is generated from electronic transitions between energy levels of the device’s active medium. In the DM80-01-3-9130-3-LC module, the active medium consists of a gallium arsenide (GaAs) substrate that is doped with n-type and p-type semiconductor material. The doping process creates a p-n-junction structure that acts as a quantum well.

When a forward-biased voltage is applied across the device, electrons recombine with the positively-charged electron holes in the device’s quantum well. This recombination process creates an optical gain medium and amplifies the laser wave. The input signal is then passed through a series of lenses that focus the light onto the output lens of the diode. The resulting laser beam is a narrow, intense beam of light that can be used in a variety of applications.

Conclusion

The DM80-01-3-9130-3-LC is a high-performance laser diode module designed for use in medical, scientific, and industrial applications. It is capable of emitting up to 15mW of power at 780nm and features a low threshold voltage with a fast response time. The underlying working principle involves the formation of a p-n-junction in the diode substrate that act as a quantum well when stimulated, resulting in an optimized laser beam for use in a variety of circumstances. As such, the DM80-01-3-9130-3-LC is an ideal choice for laser-based applications.

The specific data is subject to PDF, and the above content is for reference

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