DME375A

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	55V
Frequency - Transition:	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f):	--
Gain:	6.5dB
Power - Max:	875W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 300mA, 5V
Current - Collector (Ic) (Max):	30A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	55AW
Supplier Device Package:	55AW

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Introduction

The DME375A is a transistor designed to operate in the RF frequency range. It is a bipolar junction transistor (BJT) which has been specifically designed to provide excellent performance in radio frequency (RF) applications. The device has a low noise figure and provides a high gain over a wide range of frequencies. It is well suited for use in radio receivers, amplifiers, and other RF systems.

Application Fields

The DME375A can be used in a variety of applications including usage in radio receivers, amplifiers and other RF systems. The high gain of the transistor makes it ideal for use in systems that require high amounts of power, such as transmitting systems. The device is also useful for applications that require low noise levels, such as those found in satellite communication systems or radar systems. Additionally, the DME375A is useful for RF switching applications, such as those found in cell phone systems and remote control systems.

Working Principle

The working principle of the DME375A is based on BJT operation. The transistor consists of three layers, the base, the collector, and the emitter. These layers are made of doped silicon which is a semiconductor material. When a current is applied to the base, it causes a voltage drop across the collector-emitter junction, resulting in a current flow between the collector and emitter. This current flow is known as the collector-emitter current, or Ic.This current flow induces a voltage at the base-emitter junction, which causes the current to rise further. This is known as the saturation effect and is the basis of BJT operation. The current gain of the transistor, known as the Beta (β) is the ratio of the collector current to the base current.

Advantages

The DME375A has several advantages over other transistors, making it a suitable choice for many RF applications. The device has a wide gain bandwidth, allowing it to have a high gain over a wide range of frequencies. It also has a low noise figure, which is especially useful in applications that require low noise levels. Additionally, the device has a low power dissipation, which makes it suitable for applications that require high power levels.

Conclusion

The DME375A is an ideal transistor for RF applications. It has a high gain over a wide range of frequencies, a low noise figure, and a low power dissipation. Additionally, it is well suited for applications that require high gain, low noise levels, and high power levels. For these reasons, it is a suitable choice for many RF applications and is widely used in radio receivers, amplifiers, and other RF systems.

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