DS1350ABP-70 Allicdata Electronics
Allicdata Part #:

DS1350ABP-70-ND

Manufacturer Part#:

DS1350ABP-70

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 4M PARALLEL 34PWRCAP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: DS1350ABP-70 datasheetDS1350ABP-70 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap™ Module
Supplier Device Package: 34-PowerCap Module
Base Part Number: DS1350AB
Description

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DS1350ABP-70 is a type of memory mainly used for applications in computers, servers, and mobile phones. It is a dynamic random access memory (DRAM), which uses a capacitor and transistor for each bit in order store information. DS1350ABP-70 is a double-data rate synchronous dynamic random access memory, usually abbreviated as DDR-SDRAM. As a synchronous memory, it allows an entire row of data or an address to be read from or written to the memory array at the same time. This provides a faster access speed compared to asynchronous DRAM.

The DS1350ABP-70 is also known as a Distributed Memory Architecture (DMA), which is used to allow multiple memory devices to be connected together. It provides more flexibility than a single memory device, allowing a single device to be used in a variety of applications. The DMA also allows a higher bandwidth, which increases the speed at which data can be transferred between the devices.

In terms of its working principle, the DS1350ABP-70 utilizes two separate signals to read and write data. The first signal is the clock signal, which is used to synchronize the read and write operations. The second signal is an address signal, which is used to select which row and column of the array the data is being read from or written to. The data is then read from or written to the selected row and column of the DRAM array.

The main application field for the DS1350ABP-70 is in high-end computer applications such as servers and high-performance graphics processors. It is also used for mobile phones that require high transfer speeds. This type of memory is also used in some applications that require fast random access such as video games, graphics cards, and digital imaging applications.

The DS1350ABP-70 offers a number of benefits compared to other types of memory. It is low-power and offers a high cycle speed, which makes it more efficient than other types of memory. It is reliable and offers fast transfer speeds, and it is also suitable for applications that require a high level of reliability. The DS1350ABP-70 also offers improved error detection and correction and is suitable for applications that require high data integrity.

Overall, the DS1350ABP-70 is a reliable and efficient memory option for applications that require fast and reliable random access. It offers a variety of advantages compared to other types of memory, including a high cycle speed, low-power, improved error detection and correction, and improved data integrity. Its main application field is in high-end computer applications, mobile phones, and digital imaging applications, but it can also be used in video games, graphics cards, and other applications that require fast random access.

The specific data is subject to PDF, and the above content is for reference

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