DS1330YP-100+ Allicdata Electronics
Allicdata Part #:

DS1330YP-100+-ND

Manufacturer Part#:

DS1330YP-100+

Price: $ 14.62
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 34PWRCAP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1330YP-100+ datasheetDS1330YP-100+ Datasheet/PDF
Quantity: 80
1 +: $ 13.28670
10 +: $ 12.62390
25 +: $ 11.65500
50 +: $ 11.07390
100 +: $ 10.02340
250 +: $ 9.52371
Stock 80Can Ship Immediately
$ 14.62
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap™ Module
Supplier Device Package: 34-PowerCap Module
Base Part Number: DS1330Y
Description

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Memory is an essential component of any electronic systems. It functions as a way to store data that can be processed and used by the processor. The DS1330YP-100+ memory module is one of the more popularly used memory modules primarily designed for communication, automation, and industrial control systems. This memory module functions as a dual in–line memory module (DIMM) that is designed to support a wide range of applications.

The DS1330YP-100+ integrates advanced semiconductor technology and is built using a very effective and efficient architecture. The DS1330YP-100+ provides up to 32M x 32 memory capacity with a wide address range and fast data throughput. The memory can be divided into 256 banks of 128K x 8. It also supports multiple access modes including burst access and interleaved access. The module also features five chip select lines and seven address lines for basic addressing purposes.

The DS1330YP-100+ is ideal for applications that require high speed and high capacity. It is often used for networking equipment such as routers, switches, and firewalls. It is also used in industrial control systems and embedded systems. The memory can also be used in digital image processing systems, telecommunications, and in the military and aerospace industry. The module is also known to provide reliable performance and high system stability. The device is rated at 5.5V and 25C with an operating temperature range of 20 to 70C and an operating temperature range of -40 to 85C.

When it comes to the working principles of the DS1330YP-100+ the device basically uses a charge-pump based design with advanced architecture to generate a voltage level suitable for the DRAM memory array. The module also supports a single data output, multiplexed address/data bus and a single write enable (WE) line to support burst access mode. The burst access mode is a technique used to transfer data from the memory in a continuous series of multiple access requests rather than single accesses. In order to increase the efficiency of the memory module, the data can be transferred in an interleaved access mode, meaning that the data is accessed from multiple locations at a time.

The DS1330YP-100+ is a highly effective and efficient memory module that offers a reliable performance and high system stability. It has a wide application field and is suitable for various applications such as digital image processing, industrial control systems, telecommunications, and the military and aerospace industry. The module is designed to support a wide range of applications and its operating temperature range of -40 to 85C makes it ideal for harsher operating environments. It uses a charge-pump based design with advanced architecture to generate a voltage level suitable for the DRAM memory array. The memory also supports multiple access modes including burst access and interleaved access to improve the memory’s efficiency.

The specific data is subject to PDF, and the above content is for reference

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