
Allicdata Part #: | DS2431GB+T-ND |
Manufacturer Part#: |
DS2431GB+T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC EEPROM 1K 1WIRE 2SFN |
More Detail: | EEPROM Memory IC 1Kb (256 x 4) 1-Wire® 2µs 2-SFN ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (256 x 4) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 2µs |
Memory Interface: | 1-Wire® |
Voltage - Supply: | -- |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 2-XDFN |
Supplier Device Package: | 2-SFN (3.5x5) |
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Memory
The DS2431GB+T (1-Wire Dual Addressable Switch), also known as the “1-Wire switch” or “DS2431GB”, is an advanced integrated circuit that can be used as a switch, a storage device and/or an interface component in many applications. The DS2431GB+T was designed by Dallas Semiconductor Corporation and is based on their widely used 1-Wire interface technology.
Features
The DS2431GB+T integrates several features into one device. These features include two separate 1-Wire addressable address spaces; two memory bays containing up to 256 bytes of static EEPROM memory; low current consumption through both active and low current modes and strong EMI immunity through on-chip filtering.
Applications
The DS2431GB+T can be used in numerous applications such as: physical access control, digital signatures and secure authentication, in-system reprogramming, memory protection and identification, power sequencing, and general purpose logic. In addition, the unique architecture of the device allows it to be used in applications requiring multiple independent memories without the need for additional hardware.
Working Principle
The DS2431GB+T is powered by the selection of an address register. Once an address register is selected, the user can access the device\'s nonvolatile EEPROM memory array. This is accomplished by issuing a command to the device and then supplying the correct data. The data is then written to the EEPROM memory and can be read back. The use of the 1-Wire device and its associated commands ensures very low power consumption, which makes the DS2431GB+T an ideal choice for applications where power and space are a concern.
Conclusion
Dallas Semiconductor’s DS2431GB+T is an advanced 1-Wire switch that integrates several features and provides a wide variety of applications for its use. The device is powered by the selection of an address register and is used for multiple independent memories. The simplistic architecture and low-power consumption of the DS2431GB+T make it ideal for applications that require a compact, low-power, and reliable memory device.
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