DSC2001Q0L Allicdata Electronics
Allicdata Part #:

DSC2001Q0LTR-ND

Manufacturer Part#:

DSC2001Q0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 50V 0.1A MINI3-G3-B
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 200m...
DataSheet: DSC2001Q0L datasheetDSC2001Q0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Base Part Number: DSC2001
Description

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DSC2001Q0L is a commonly found type of bipolar junction transistor or BJT, which is a three-terminal active device consisting of two p-n junctions. It is mostly used in amplification and switching applications, and the type of applications and its working depend on its configuration.

DSC2001Q0L transistors are widely used for their low noise and low power consumption. They can be used for a variety of purposes including linear amplification, switching, and switching between power supplies. The device can also be employed to provide voltage control in applications where a fixed voltage is required.

It is used in signal amplification because of its ability to amplify the signal and boost the gain of the signal. Its low noise characteristic makes it useful in audio amplifiers and other signal conditioning applications. The device is also employed in high speed logic circuits because of its high speed response time. It is used in numerous computer-related applications and is also popular for switching in power supplies.

The DSC2001Q0L has a base-bias current range of about 5 to 50mA. It is a collector-emitter-base topology and its collector-base leakage current is a maximum of 500 μA. It is manufactured with a lead frame and base-collector-emitter technique, with a thickness of 4.5μm. It is packaged in a lead-free TO-18 package.

The device\'s working principle is based on the fact that useful current can be passed between collector and emitter of the transistor when a small base current is applied. As the base current is increased, the current between collector and emitter increases too. The amount of collector current is directly proportional to the amount of base current; this is known as the current gain, or β.

This property of the transistor is used in various kinds of amplifying devices like audio amplifiers and instrumentation amplifiers. The current gain is also used for a variety of other functions, like switching signals and providing voltage control for power supplies. Other performance parameters that affect the DSC2001Q0L\'s working principle include power dissipation and frequency response.

To sum up, DSC2001Q0L is a commonly used BJT transistor which is employed for amplifying signals, switching signals, and providing voltage control for power supplies. Its working principle is based on the fact that a base current is applied and the current between the collector and emitter is proportionally increased. It has a base-bias range of 5 to 50 mA and is manufactured with a lead frame and base-collector-emitter technique. Its performance parameters include power dissipation and frequency response.

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