DT170N2014KOFHPSA1

Thyristors - SCRs - Modules: DT170N2014KOFHPSA1 application field and working principle

Headquartered in the US, Application International Corporation’s (AIC’s) DT170N2014KOFHPSA1 is a four-layer metal-oxide-semiconductor field effect transistor (MOSFET) which works on the principles of the thyristor and the Silicon-controlled rectifier (SCR). It is widely used in various industrial applications where constant & interrupted power is required, including within the HVAC, heating, ventilating, fluorescent lighting applications and even within process control.

Application Field

The DT170N2014KOFHPSA1 is a 4-layer MOSFET, or Thyristor-MOSFET, which is most commonly used for commercial and industrial applications because of its higher power handling capabilities and fast turn-on and turn-off times. In comparison to SCR, which can be triggered on or off with a lower power value, the MOSFET requires higher electric signals. In addition, with a turn-on time of less than 10 nanoseconds and a turn-off time of less than 10 microseconds, the MOSFET is significantly faster than the SCR.

The application field of the DT170N2014KOFHPSA1 is vast and it finds different applications in various power engineering applications. This Thyristor-MOSFET is most frequently used in high-voltage rectification, in ventilating, heating and air conditioning applications, uninterruptible power supplies, fluorescent lighting and even within process control applications. Moreover, due to its fast switching and higher power capacities, the DT170N2014KOFHPSA1 is vastly used in motor systems and transformer connections in motor control applications. It can also be used for power hot switching.

Working Principle

To understand the working principle of the DT170N2014KOFHPSA1, it is important to look at the MOSFET portion first. The MOSFET is essentially composed of a metal oxide semiconductor field effect transistor (MOSFET), which works in a similar manner to an SCR. The device contains three terminals which are the control gate, source and drain. When a voltage is applied to the gate, the source-drain channel begins to conduct electric current through it, thus making it a controlled conductor.

The MOSFET portion of the thyristor-MOSFET acts as an amplifier and can increase the power of the gate voltage accordingly. This makes it possible for the device to work with lower gate voltages, thus making it ideal for industrial applications with limited power sources. The device can switch faster than an SCR, allowing it to meet the demands of high-speed applications.

The thyristor portion of the DT170N2014KOFHPSA1 is what enables it to be triggered off and on easily. The thyristor portion of the device contains two electrodes, an anode and a cathode. When a voltage is applied across both electrodes, the thyristor will then fire, and will remain in a conducting state until it is reset by reversing the current or when a different voltage is applied.

In conclusion, the DT170N2014KOFHPSA1 is a four-layer MOSFET which works on the principles of the thyristor and Silicon-controlled rectifier (SCR). It is most commonly used for commercial and industrial applications because of its faster switching and higher power capabilities. The device can be used for high-voltage rectification, in HVAC, fluorescent lighting and process control applications.