DTB513ZMT2L Allicdata Electronics
Allicdata Part #:

DTB513ZMT2L-ND

Manufacturer Part#:

DTB513ZMT2L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTB513ZMT2L datasheetDTB513ZMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.05117
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Base Part Number: DTB513
Supplier Device Package: VMT3
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DTB513ZMT2L is a pre-biased alternative of the popular single-type bipolar junction transistor (BJT). They are commonly used in applications requiring amplification, switching and wave shaping. The pre-bias feature of this product offers a way of increasing gain and suppressing saturation voltage. A bipolar transistor is a three-layer semiconductor device which is composed of emitter, base and collector. In BJT transistors, the emitter lies in the middle and is an active layer, while the base and the collector form the passive layers. When a small current is applied to the base, a larger current will be made to flow through the emitter-collector circuit.The pre-bias feature of DTB513ZMT2L allows the collector-emitter voltage to be set prior to its use. This voltage is adjusted to a specific value by connecting the device\'s base to a high-impedance current source. When the device is also supplied with a direct current, its collector-emitter voltage is kept constant. This makes DTB513ZMT2L ideal for applications where high gain and saturation suppression is required. The DTB513ZMT2L is mainly used in analog, RF and digital signal processing applications. These transistors are typically employed for the modulation of analog signals, providing signal mixing and mixing for higher frequency signals, reducing noise in superheterodyne receivers, amplifying the digital signals of digital logic circuits and pulse shaping to create signals with a specific waveform.On the other hand, the pre-bias feature of this type of transistor makes it suitable for power switching applications as well. The pre-biases voltage ensures no excessive amount of current is drawn when the device is switched on, this helps it to reduce power consumption. This is mostly used in circuits where DC power has to be converted to higher AC power levels. In summary, DTB513ZMT2L is a single-type bipolar junction transistor with pre-Biased features that are suitable for a range of analog, RF and digital signal processing applications. These transistors are mainly used for the modulation of analog signals, providing signal mixing and mixing for higher frequency signals, reducing noise in superheterodyne receivers, amplifying the digital signals of digital logic circuits and pulse shaping to create signals with a specific waveform.

The specific data is subject to PDF, and the above content is for reference

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