DTC614TUT106

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	20V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	150MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	UMT3
Base Part Number:	DTC614

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The DTC614TUT106 Pre-biased Single Bipolar Junction Transistor (BJT) is a versatile and powerful device that sits firmly at the top of the transistor family tree. With its multi-functionality, it is a popular choice in applications ranging from transistor switch drivers to high-current digital circuits and other applications.When discussing the application field and working principle of the DTC614TUT106, it is important to look at the device\'s internal architecture and design. The DTC614TUT106 is a Single Bipolar Junction Transistor (BJT), which means that it consists of two diodes, one set of source and drain terminals, and a single collector terminal. As a pre-biased BJT, the DTC614TUT106 also includes an integrated bias/control network. When looking at the application field in which the DTC614TUT106 is used, it becomes clear why it is often chosen over other types of transistors such as FETs and IGBTs. In low-power applications such as driving thin-film transistors, the DTC614TUT106 is particularly suited due to its low voltage and current requirements, as well as its ability to deliver high speed switching and low on-resistance. Additionally, in motor control and digital design applications, the DTC614TUT106 is capable of both high-performance switching and current drive. In terms of the working principle of the DTC614TUT106, it is based on two transistors connected in series and arranged so that the base of one transistor triggers the other. This “open-collector” setup allows for a current to be flowed from collector to the base terminal, allowing for the device to switch from a high-impedance to low-impedance state. With its high input impedance, the DTC614TUT 106 is able to achieve both high speed and low power switching. When discussing the application field and working principle of the DTC614TUT106 Pre-Biased Single Bipolar Junction Transistor, it can be seen that this device offers a versatile and powerful set of features which makes it suitable for many design applications. With its low voltage and current requirements, as well as its high-performances switching capability, it is not difficult to understand why the DTC614TUT106 is used in various design fields.

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