DTDG14GPT100 Allicdata Electronics
Allicdata Part #:

DTDG14GPT100TR-ND

Manufacturer Part#:

DTDG14GPT100

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 2W MPT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTDG14GPT100 datasheetDTDG14GPT100 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.13045
2000 +: $ 0.11894
5000 +: $ 0.11126
10000 +: $ 0.10359
25000 +: $ 0.10231
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 80MHz
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Base Part Number: DTDG14
Description

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The DTDG14GPT100 is a pre-biased single bis-polar junction transistor (BJT) designed to handle power electronic applications. It is designed to provide excellent performance while being totally suitable for use in various consumer, industrial, and automotive applications. Due to its outstanding features, this component has been widely adopted in various types of applications.

Applications

The DTDG14GPT100 is suitable for many consumer electronics and automotive applications. Some of its applications include:

  • Low-voltage consumer (household) applications such as electric motor control and lighting.
  • Deterministic DC transients.
  • High-power motor drive systems.
  • Stepper motor interface applications.
  • Power inverters and converters.
  • Switch mode power supplies.
  • Harsh environment industrial applications.

Working Principle

The working principle of the DTDG14GPT100 pre-biased single BJT is based on its ability to drive the load with a high-current conduction p-n junction. In this application, the base region of the transistor is used to control the emitter-base junction, thus allowing the sourcing current to be manipulated by applying a specific base current. The drain region of the transistor then acts as the collector and allows the current to be switched off when necessary. When the transistor is in a biasing state, the diode injection of the base-emitter junction becomes active, allowing a narrowed switching region.

Overall, this component provides excellent performance in controlling the current flow through the load in a highly efficient way. It also offers a wide range of operating voltages, making it suitable for a variety of applications.

Conclusion

The DTDG14GPT100 is an excellent pre-biased single BJT designed for a wide range of applications. It provides excellent performance and is highly compatible with various consumer, industrial, and automotive applications. It operates with a wide range of voltages, making it suitable for a variety of applications and allows current to be driven efficiently with a narrowing switching region.

The specific data is subject to PDF, and the above content is for reference

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