Allicdata Part #: | EAPLP04RRKA0-ND |
Manufacturer Part#: |
EAPLP04RRKA0 |
Price: | $ 0.04 |
Product Category: | Sensors, Transducers |
Manufacturer: | Everlight Electronics Co Ltd |
Short Description: | DETECTOR THRU-HOLE |
More Detail: | Phototransistor 940nm Side View Radial, Side View |
DataSheet: | EAPLP04RRKA0 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04057 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Collector (Ic) (Max): | 40mA |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 940nm |
Viewing Angle: | -- |
Power - Max: | 75mW |
Mounting Type: | Through Hole |
Orientation: | Side View |
Operating Temperature: | -25°C ~ 85°C (TA) |
Package / Case: | Radial, Side View |
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Optical sensors are used in numerous applications, from reading bar codes to sensing motion. A phototransistor, of which the EAPLP04RRKA0 is a type, is an optical displacement sensor that utilizes photoelectric effects to detect changes in optical intensity. In this article, we will examine the application field and working principle of the EAPLP04RRKA0.
The EAPLP04RRKA0 phototransistor typically operates at a wavelength of 940nm, although it can also be used at other wavelengths within its operating wavelength range of 400-1100nm. The relative aperture sensitivity (*) of the sensor is 6A/W, and its emission peak alternation range is 40nm. This phototransistor is particularly suitable for applications related to the detection of small range optical signals and subsequent signal amplification.
Due to their light weight and small size, the EAPLP04RRKA0 and other phototransistors are ideal for shift register readout applications and robotics. The phototransistor can also be used in applications such as optical navigation, distance measurement, and front-end signal detection. Additionally, this phototransistor is an excellent choice for installations requiring a longer life than other phototransistor sensors.
The EAPLP04RRKA0 phototransistor consists of a semiconductor device with an emitter-collector gap that forms a p-n junction. The emitter of the device is opposite the base. Photon radiation passing into the device activates electrons in the emitter-base junction, allowing electrons to flow from the emitter to the base, and from the base to the collector. This flow of electrons is continuous even after the incident light is removed, allowing for changes in optical intensity to be accurately detected.
Although the EAPLP04RRKA0 is a relatively sensitive phototransistor, similar to other phototransistors, its sensitivity is limited by its permanent-magnetic field and can be improved by incorporating a rotating magnet into the system. Additionally, because the phototransistor’s energy bandgap is relatively wide, the device may suffer from ambient light interference.
In conclusion, the EAPLP04RRKA0 is a type of phototransistor that can be used in a variety of applications related to the detection of small range optical signals and subsequent signal amplification. Its operating wavelength range and aperture sensitivity make it an excellent choice for applications such as optical navigation, distance measurement, and front-end signal detection. However, its sensitivity can be limited by its permanent magnetic field and may be affected by ambient light interference.
The specific data is subject to PDF, and the above content is for reference
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