Allicdata Part #: | EC3H02BA-TL-H-ND |
Manufacturer Part#: |
EC3H02BA-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 10V 70A ECSP1006-3 |
More Detail: | RF Transistor NPN 10V 70mA 7GHz 100mW Surface Moun... |
DataSheet: | EC3H02BA-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1dB @ 1GHz |
Gain: | 8.5dB |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 20mA, 5V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-ECSP1006 |
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EC3H02BA-TL-H is a type of transistor that operates in the field of Radio Frequency (RF). It is based on Bipolar Junction Transistor (BJT) technology and is suitable for use in a wide variety of applications, including radio transmission and reception. In this article, we will discuss the application field of the EC3H02BA-TL-H, as well as its working principle.
Application Field
The EC3H02BA-TL-H is a high frequency transistor with a wide operating frequency range. It can be used in a variety of applications such as radio transmission and reception, as well as in other high-frequency applications, including amplifiers, oscillators, and modulators. The high voltage rating of EC3H02BA-TL-H enables it to be used for higher power applications, making it suitable for use in communication systems, automotive systems, and industrial systems.
Working Principle
The EC3H02BA-TL-H is based on Bipolar Junction Transistor (BJT) technology. This technology works by using a pair of diodes to create a voltage gradient. A small current is passed through the base-emitter junction, which then creates a larger current to flow through the collector-emitter junction. This larger current is then able to power the load that is connected to the transistor.
The functioning of the transistor is also dependent on the voltage and current parameters of the device. These parameters include collector-emitter voltage (Vce), base-emitter voltage (Vbe), collector current (Ic), base current (Ib), and transit frequency (ft). The voltage and current parameters determine the amount of power that is supplied to the load, which in turn affects the efficiency and performance of the EC3H02BA-TL-H.
Conclusion
The EC3H02BA-TL-H is a high frequency transistor with a wide operating frequency range. It can be used in a variety of high-frequency applications, such as radio transmission and reception, amplifiers, oscillators, and modulators. The EC3H02BA-TL-H is based on Bipolar Junction Transistor (BJT) technology, which works by using a pair of diodes to create a voltage gradient. The transistor functions by controlling the voltage and current parameters, which in turn affects the amount of power that is supplied to the load. This makes the EC3H02BA-TL-H an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EC3H02BA-TL-H | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 10V 70A ECSP100... |
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