EC4H09C-TL-H Allicdata Electronics
Allicdata Part #:

EC4H09C-TL-H-ND

Manufacturer Part#:

EC4H09C-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 3.5V 40MA ECSP1008-4
More Detail: RF Transistor NPN 3.5V 40mA 26GHz 120mW Surface Mo...
DataSheet: EC4H09C-TL-H datasheetEC4H09C-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Gain: 15dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFDFN
Supplier Device Package: 4-ECSP1008
Description

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The EC4H09C-TL-H is a type of bipolar junction transistor (BJT) used for radio frequency (RF) applications. It is often used for microwave radio transmitters and receivers, radio transmitters, satellite receivers and other radio applications.A bipolar junction transistor is composed of three layers of semiconductor material – the emitter, base, and collector. When a potential difference is applied to the base-emitter junction of the transistor, it causes a current to flow from the emitter to the collector. This current flow can be amplified or modulated to create an RF signal.The EC4H09C-TL-H is a high performance transistor designed for radio frequency applications. Its features include low noise, low power consumption and wide bandwidth. It is capable of operating in a frequency range of 10MHz to 400MHz, with a gain of up to 24dB. The transistor is supplied in a 3-pin TO-92 package, making it suitable for surface mount designs.The EC4H09C-TL-H can be used in a variety of RF applications such as high frequency amplifiers, oscillator circuits, mixers, and filters. It can also be used in multi-way radio systems and in mobile communication systems. The performance of these applications will be significantly improved when using the EC4H09C-TL-H instead of more traditional transistors.The operation of the EC4H09C-TL-H is based on the principles of electron movement. When a potential difference is applied to the transistor, it causes a current to flow from the emitter to the collector. This current flow is then amplified by the collector current flowing through the base-collector junction. The amplified current can then be used to create radio frequency strength signals.The performance of the EC4H09C-TL-H can be optimized by careful selection of the biasing voltage and circuit layout. The collector voltage needs to be adjusted to ensure the best amplifier gain and noise characteristics. The EC4H09C-TL-H also requires good thermal management to ensure that it does not overheat.In conclusion, the EC4H09C-TL-H is a versatile transistor that can be used for a variety of radio frequency applications. Its wide bandwidth and low noise characteristics make it ideal for high frequency amplifiers and oscillator circuits, as well as multi-way radio systems. Proper biasing and thermal management will be required for optimal performance.

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