ECE60US03-S

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ECE60US03-S is a member of the AC DC converters family. This device is a 600V, 2.5A N-channel power MOSFET that employs the latest in high-voltage silicon technology from Europe’s leading power semiconductor manufacturers. This power MOSFET has a package layout that is ideal for high power applications. It is also an excellent choice for high frequency applications since it has low total gate charge.

The typical application for devices belonging to the ECE60US03-S family is in switching power supplies, power conversion systems, uninterruptible power supplies, motor drives, sensors, and other high-power applications. This device can also be used in consumer electronics such as TVs, audio amplifiers, and other consumer electronics that require efficient, high-power solutions.

The ECE60US03-S utilizes a standard dual N-channel MOSFET, which is ideal for high-frequency applications. Its low gate charge and the low output capacitance makes it suitable for high-frequency switching circuits. This Power MOSFET also has a low intrinsic body diode forward voltage drop, which makes it highly efficient even at high frequencies.

The working principle of the ECE60US03-S is essentially the same as with any other MOSFET. The Gate voltage that provides the voltage across the power MOSFET is provided by the external circuit in order to turn it “on” or “off”. When the gate voltage is applied, a channel is formed between the source and drain and a current will pass through the device. When the voltage is removed, the channel is removed and no current will pass. This On/Off state of the power MOSFET is the basis of its operation.

In addition to providing high-efficiency switching and low-resistive conduction, the ECE60US03-S is a highly stable power MOSFET with a maximum junction temperature of +175°C and a maximum R_DS(on) of 2.5Ω.

For enhanced reliability, the ECE60US03-S has an integrated gate protection circuit to prevent ESD damage to the device. The device has an integrated dV/dT sensing circuit that allows it to detect changes in drain source voltage and adjust its current conduction accordingly. The device also has a fast recovery body diode which reduces ripple current and improves system efficiency.

ECE60US03-S is very versatile, being designed for use in a variety of applications, including automotive, industrial, and consumer. It is an ideal choice for customers that are looking for a reliable and efficient power MOSFET that can handle high power levels and high-frequency switching.

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