| Allicdata Part #: | ECF840AAACN-C2-Y3-ND |
| Manufacturer Part#: |
ECF840AAACN-C2-Y3 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 8G PARALLEL |
| More Detail: | SDRAM - Mobile LPDDR3 Memory IC 8Gb (512M x 16) Pa... |
| DataSheet: | ECF840AAACN-C2-Y3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR3 |
| Memory Size: | 8Gb (512M x 16) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.14 V ~ 1.95 V |
| Operating Temperature: | -- |
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ECF840AAACN-C2-Y3 Memory Application Field and Working Principle
The ECF840AAACN-C2-Y3 memory is used in many applications rangingfrom automobiles, medical and industrial. Within automotive unit, itis used to store engine control and other related settings.Medical applications include providing non-volatile storage forpatient data such as scans, vital signs and other results. Inindustrial settings, it is used to store critical settings regardingoperation of automated machinery and other precision operations.
The working principle of ECF840AAACN-C2-Y3 is based on electroniceeprom (electrically erasable programmable read only memory).This type of memory chip is a non-volatile memory which retainsthe stored data even in case of power failure. The memory can beprogrammed and erased in blocks. The programming of the memorychip is done by applying a certain level of electrical pulses.Once the pulses are applied, the binary information within the chipis updated.
The ECF840AAACN-C2-Y3 memory chip also contains erasing circuitry.When electricity is applied over the memory cell, the binaryinformation within the cell is erased. The actual process is highlydependent on the design of the particular chip. The details on theprocess of erasing the contents of a memory chip are available inthe datasheet.
The ECF840AAACN-C2-Y3 memory chip is manufactured using CMOS technology. CMOS (complementary metal oxide) semiconductor technology is widely used because of its low power consumption, high level of integration and low cost.
The ECF840AAACN-C2-Y3 memory chip offers superior storage capacity for its size. It is widely used in small and portable devices due to its low power consumption and low cost. Further, its popularity has increased due to its ability to retain large and complex data sets.
In conclusion, the ECF840AAACN-C2-Y3 memory chip is used in a wide variety of consumer and professional application. It is manufactured using CMOS technology and offers superior storage capability. Lastly, its popularity is due to its low power consumption, low cost and non-volatile storage capabilities.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| ECF840AAACN-C1-Y3 | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLELSDRAM ... |
| ECF840AAACN-C2-Y3 | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLELSDRAM ... |
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ECF840AAACN-C2-Y3 Datasheet/PDF