EDW2032BBBG-6A-F-R TR Allicdata Electronics
Allicdata Part #:

EDW2032BBBG-6A-F-RTR-ND

Manufacturer Part#:

EDW2032BBBG-6A-F-R TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC RAM 2G PARALLEL 170FBGA
More Detail: SGRAM - GDDR5 Memory IC 2Gb (64M x 32) Parallel 1....
DataSheet: EDW2032BBBG-6A-F-R TR datasheetEDW2032BBBG-6A-F-R TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 2Gb (64M x 32)
Clock Frequency: 1.5GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.31 V ~ 1.65 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 170-TFBGA
Supplier Device Package: 170-FBGA (12x14)
Description

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The EDW2032BBBG-6A-F-R TR is a type of memory device used in many computer systems. It has several features and functions that make it a popular choice for memory systems, especially in the industrial environment. In this article we will discuss the application field and working principle of the EDW2032BBBG-6A-F-R TR memory device.

The EDW2032BBBG-6A-F-R TR is a dynamic random access memory (DRAM) device, meaning it is a type of memory that is capable of storing data for short periods of time. It is typically used in computers, but can also be used in industrial applications such as embedded systems and other devices. In the EDW2032BBBG-6A-F-R TR, the dynamic random access memory is integrated into a small chip. This chip contains all of the necessary control mechanisms and cells that are necessary to properly store and retrieve data.

Unlike other memory devices, the EDW2032BBBG-6A-F-R TR uses a special architecture, called the asynchronous DRAM. This architecture is designed to provide faster data transfer rates and is more efficient than traditional DRAM architectures. This architecture also helps to reduce power consumption, since the DRAM needs to output fewer signals and consume less energy. The EDW2032BBBG-6A-F-R TR memory device also uses a special type of cell, called the Three Transistor Access Cell (TTAC). The TTAC is specifically designed to provide more reliable data access, meaning that data can be stored and retrieved more quickly and more securely.

One of the primary applications for the EDW2032BBBG-6A-F-R TR is in industrial applications. The device is commonly used in medical equipment, robotics, industrial control systems, and even in automobiles. Its reliable performance and low power consumption make it a desirable choice in these types of applications. Additionally, the EDW2032BBBG-6A-F-R TR memory device is often used in bigger systems, such as servers, as it can quickly access large amounts of data and is highly reliable.

The working principle of the EDW2032BBBG-6A-F-R TR memory device is based on the concept of address mapping. This means that each memory cell is assigned an address, so that when the CPU attempts to access a certain memory cell, it will know which address to look for. This allows for much faster data retrieval, as many memory cells can be accessed at the same time. Additionally, the TTAC allows for more secure data access, since it helps to prevent unintended access of memory data.

In conclusion, the EDW2032BBBG-6A-F-R TR is a type of dynamic random access memory device. It is used in many industrial and embedded applications due to its efficient performance and reliable data access. Additionally, its asynchronous DRAM architecture and TTAC technology allow for fast data retrieval and secure data access. Understanding the application field and working principle of the EDW2032BBBG-6A-F-R TR is essential to ensure its efficient use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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