EDY4016AABG-DR-F-D Allicdata Electronics
Allicdata Part #:

EDY4016AABG-DR-F-D-ND

Manufacturer Part#:

EDY4016AABG-DR-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1....
DataSheet: EDY4016AABG-DR-F-D datasheetEDY4016AABG-DR-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)
Description

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EDY4016AABG-DR-F-D Memory Application Field and Working Principle

EDY4016AABG-DR-F-D memory is a type of non-volatile memory that works by storing data in an oxide film using laser-assisted programming. It is capable of storing up to 8GB of data in a single chip and is used in a wide range of applications, such as digital cameras, cell phones, and various consumer electronics devices. The advantage of this type of memory is that it can be written to and erased multiple times, and the data stored in it retains its integrity even after multiple erasures.

The EDY4016AABG-DR-F-D memory employs a three-dimensional floating gate technology to store bits of information. This technology is similar to flash memory technology, but the data is stored in two planes. The two planes are referred to as a storage plane and a control plane. During write operations, an electric current is sent to both planes to create a charge that is sufficient to write a data bit onto the storage plane. During read operations, an electrical voltage is sent to both planes to activate the bit’s stored state.

The storage plane of the EDY4016AABG-DR-F-D memory is constructed from a layer of metal oxides and semiconductors. Each cell of the storage plane is composed of a metal gate capacitor, a floating gate, and a control gate. The capacitors are typically made of silicon and titanium, while the control gate is made of boron. The floating gate is composed of an oxide film and functions as the mechanism that stores data. The control gate is responsible for controlling the writing and erasing of data, as well as its activation.

The EDY4016AABG-DR-F-D memory is well-suited for use in digital cameras, cell phones, and consumer electronics due to its small size and low power consumption. It is also capable of storing a large amount of data in a single chip and its data is durable, maintaining its integrity even after multiple erasures. The memory is capable of writing data to the storage plane with a current of 10-12mA and reading data from the storage plane with a voltage of 0.7V-0.8V. Memory chips are typically rated for up to 5,000 erase cycles, proving them to be highly reliable.

The EDY4016AABG-DR-F-D memory is a highly versatile memory chip well-suited for a variety of applications. It is capable of storing up to 8GB of data in a single chip and is highly reliable due to its ability to withstand up to 5,000 erase cycles. Its use of three-dimensional floating gate technology allows for low power consumption, making it an ideal choice for digital cameras, cell phones, and other consumer electronics devices.

The specific data is subject to PDF, and the above content is for reference

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