EL1010-G

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Optoisolators are devices that transfer data signals between two isolated circuits. Isolation is used to prevent interference and protect systems from damage due to electric shock. The EL1010-G optoisolator is a photovoltaic output isolation device that provides up to 100V of isolation between input and output. It also has low output overshoot and low output delay variation, making it ideal for high speed applications.

The EL1010-G device is composed of a gallium arsenide infrared light emitting diode (LED) optically coupled with a photosensitive NPN transistor. When the LED is on, the photo transistor is biased to conduct current through the collector-emitter. The gain of the photo-transistor is determined by the LED reverse voltage and collector current.

The working principle of the EL1010-G is based on the optical transfer of light energy. When the LED is high, the cutoff voltage of the amplified photo-transistor decreases significantly, allowing current to flow through the collector-emitter. At the same time, the LED is switched off, and the phototransistor is biased into the non-conducting state.

The EL1010-G can be used in a wide variety of applications, including microprocessor control, current loop control, and digital control systems. This device can also be used to protect against noise in computer systems, and for fusing circuits. The particular applications of this optoisolator will depend on the particular application requirements.

The EL1010-G is an ideal optoisolator for high speed applications, providing isolation of up to 100V. It offers low output overshoot and low output delay variation, which are key features of any optoisolator. This device can be used in a wide variety of applications, and is an excellent choice for a number of digital systems.

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