EM 1AV1 Discrete Semiconductor Products

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EM1AV1s are single rectifier diodes made up of two distinct regions of semi-conductor material – an N-type region in contact with an anode and a P-type region in contact with the cathode. The diode is reverse biased when the anode voltage with respect to the cathode is below the peak inverse voltage breakdown value. At this point, the diode will not conduct in the reverse direction.

The EM1AV1 is designed to provide high voltage isolation of inputs to a system, to reduce ground loop problems. The EM1AV1 is most commonly used in protection circuits, where they are used to clamp transients generated by inductive loads, as well as to reduce reverse voltage flow and protect sensitive components from high voltage spikes. The EM1AV1 also provides fast switching action, making it ideal for high frequency applications such as switching power supply designs.

The EM1AV1 is designed to be used primarily in a high-voltage environment where the voltage applied across the diode should not exceed the rated Peak Inverse Voltage (PIV). This PIV value is the maximum voltage which the diode is capable of handling in the reverse bias condition. The EM1AV1 is rated for operation over a voltage range from 5V up to 600V, so it is suitable for applications that require high isolation and fast response times. Additionally, the EM1AV1 has a low on-state reverse current, extending its useful life in high-current conditions.

The EM1AV1 diode is suitable for both commercial and industrial applications and is widely used in computer power supplies, point of load (POL) converters, two-way radios and medical equipment. This diode is a versatile component that is also used in less traditional applications, such as cell phone charging circuitry and solar panel protection circuits.

The EM1AV1\'s working principle is relatively simple. When a current is passed through the diode, the anode and cathode extend outwards and create a voltage drop. This voltage drop is indicative of the EM1AV1\'s forward voltage drop and typically ranges from 4V to 5V. When the diode is reverse biased, the anode and cathode interact differently and the resulting voltage drop is indicative of the diode\'s peak inverse voltage (PIV). This PIV value ranges from 5V to 600V depending on the specific device.

The construction of the EM1AV1 has been optimized for low-loss performance and reliable operation. Its reinforced package is designed to limit the amount of heat generated by the device, and its tight tolerance for reverse standoff voltage ensures greater protection against electrical surges. The EM1AV1 is an ideal diode for applications that require a fast, efficient and reliable rectification process.

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