EM 1C Allicdata Electronics
Allicdata Part #:

EM1C-ND

Manufacturer Part#:

EM 1C

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 1KV 1A AXIAL
More Detail: Diode Standard 1000V 1A Through Hole
DataSheet: EM 1C datasheetEM 1C Datasheet/PDF
Quantity: 1000
10000 +: $ 0.09824
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 20µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: --
Operating Temperature - Junction: -40°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

EM 1C is a type of single rectifier diode. It has a planar structure, with one main and one bypass layer, and is used in power supply applications to rectify and regulate AC input voltages. It is a low-voltage device, rated at 60 volts, and has a reverse recovery time of 5-40 ns.

The main function of EM 1C is to convert an AC input voltage into a steady DC output voltage. In doing so, it is able to provide a very efficient and reliable supply for various applications. The rectifier diode is designed to allow the input current to flow only in one direction, while blocking the flow of current in the opposite direction. This allows the voltage to remain constant, regardless of changes in the AC supply. Once rectified, the DC output voltage can then be used directly to power other components, or can be regulated to meet specific requirements.

The EM 1C is constructed in a two-layer planar structure, which consists of one main and one bypass layer. The layers are made of materials with different levels of electron mobility. The main layer has a higher electron mobility and so is used to direct the forward flow of current. The bypass layer has a lower electron mobility and is used to direct the reverse current flow back to the source.

In order to effectively operate the EM 1C, certain conditions must be met. The input voltage must be between 5 volts and 60 volts and the impedance must be less than 20 ohms. Additionally, the device must be able to handle a given reverse recovery time. This is the time it takes for the diode to reset itself after the input voltage stops. The reverse recovery time of the EM 1C is between 5-40 ns. This allows it to rapidly switch between its forward and reverse states, making it ideal for use in power supplies.

The EM 1C can be used in a wide variety of applications, including digital circuitry, power supplies, battery chargers, and communication devices. It is especially useful in power circuits which require a high frequency, in order to reduce the ripple voltage present in the output voltage. Additionally, its small size and high efficiency make it ideal for use in portable electronic devices, such as cell phones, laptops, and tablets.

In short, the EM 1C is a single rectifier diode which is designed for use in power circuits, in order to efficiently convert an AC input voltage into a steady DC output voltage. This device is constructed from a two layer planar structure and is able to rapidly switch between its forward and reverse states, allowing for a high frequency input current. Finally, its small size and high efficiency make it ideal for use in a variety of applications, including digital circuitry and portable electronic devices.

The specific data is subject to PDF, and the above content is for reference

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