Allicdata Part #: | EM1V0-ND |
Manufacturer Part#: |
EM 1V0 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE GEN PURP 400V 1A AXIAL |
More Detail: | Diode Standard 400V 1A Through Hole |
DataSheet: | EM 1V0 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08930 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 970mV @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Power applications increasingly rely on Application Specific Integrated Circuits (ASICs) as they provide superior performance, reduce size and cost. However, the use of ASICs may also bring certain challenges to the design process, such as increased power consumption, device compatibility, and the need for more specialized test mechanisms. To help address these challenges, the EM1V0 rectifier has been designed to provide a cost-effective solution that optimizes device usability and improves system overall performance.
The EM1V0 is a single, high-performance, low-voltage rectifier. It integrates two main functions into a single package: an ultra-soft-recovery diode and an anti-parallel MOSFET. Combining these two components in a single package provides significant space savings, improved efficiency, and optimized device performance. This unique combination of components allows the EM1V0 to operate with higher current ratings, lower losses, lower power requirements and greater flexibility in applications ranging from motor drives and power conversion to consumer electronics and electric vehicle charging.
The EM1V0 rectifier works by combining the forward current rectification characteristics of a diode with the series-level shutdown capability of an anti-parallel MOSFET. This combination allows the device to provide high performance both in terms of rectification characteristics and low-side switch control. The diode’s forward current rectification characteristic allows the device to rectify high-frequency current pulses, while the anti-parallel MOSFET is able to provide a series-level shutdown capability when the device is in an off state. In addition, the series-level shutdown capability allows the device to efficiently reduce the power consumption of devices connected to the device’s output by preventing any current leakage when not in use. This helps further improve efficiency and reduce power consumption.
The EM1V0 rectifier also includes an additional feature that provides improved EMC compliance and device safety. This feature, known as an active bridge, helps prevent unwanted current leakage and reverse currents. The device is also capable of providing short-circuit protection, which is enabled by the anti-parallel MOSFET. The combination of the diode, the anti-parallel MOSFET, and the active bridge allow the device to provide superior performance while simultaneously improving safety and device compatibility.
The EM1V0 rectifier is an efficient and versatile device designed to meet today’s application needs. It provides a combination of efficient rectification characteristics, series-level shutdown capability, improved EMC compliance, and short-circuit protection all in one cost-effective device. The EM1V0 rectifier combines superior performance and device compatibility to address many of the design challenges posed by the rapidly expanding field of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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