EMFA164A2PM-DV-F-R TR Allicdata Electronics
Allicdata Part #:

EMFA164A2PM-DV-F-RTR-ND

Manufacturer Part#:

EMFA164A2PM-DV-F-R TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: LPDDR3 SPECIAL/CUSTOM PLASTIC VF
More Detail: Memory IC
DataSheet: EMFA164A2PM-DV-F-R TR datasheetEMFA164A2PM-DV-F-R TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Description

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Memory technology is an important field of modern electronics and a major factor in the development of the computer industry. The EMFA164A2PM-DV-F-R TR is an advanced type of memory device that is widely used in modern computer systems, as well as other related applications. The device is comprised of DRAM, Flash and NAND memory components.

EMFA164A2PM-DV-F-R TR Application Field

The EMFA164A2PM-DV-F-R TR is primarily used in computer systems and mobile devices, including laptops, tablets, smartphones, and other digital communication devices. The device is also capable of being used in other applications such as navigation systems, medical technology, and automotive electronics.

The device provides higher data transmission speeds and increased storage capacity, making it ideal for many types of applications. It is also capable of operating at lower power consumption, meaning it is suitable for use in battery operated systems. The device has the ability to store and retrieve data rapidly, enabling it to be used in applications where high speed data access is essential.

EMFA164A2PM-DV-F-R TR Working Principle

The EMFA164A2PM-DV-F-R TR is a memory device that is based on the principles of dynamic random access memory, or DRAM. This type of memory is organized into cells, which are interconnected and arranged in rows and columns. Each cell contains an individual capacitance, or charge, that stores a digital signal.

When a signal arrives at the memory device, it is accessed and the individual cells are activated. The charge in the cell changes to reflect the new data, and that data can then be used by the system. Data can be written to the cells, stored, and then read from the cells, using the same sequence of accesses.

The EMFA164A2PM-DV-F-R TR also uses flash and NAND memory, which use a different method of storage compared to DRAM. Flash memory is organized into blocks, rather than individual cells, and each block is capable of holding multiple bytes of data. NAND memory also utilizes blocks, but instead of individual capacitors, it uses a matrix of transistors to store binary data.

The EMFA164A2PM-DV-F-R TR memory device is capable of providing improved performance, reliability and power efficiency. In addition, it can support a wider range of applications, making it an ideal choice for many types of systems and devices.

The EMFA164A2PM-DV-F-R TR is an advanced memory device that provides improved performance and greater power efficiency, making it suitable for use in a wide range of applications. Its DRAM, Flash and NAND memory components, combined with its fast data access speeds and large storage capacity, make it an ideal choice for many types of systems.

The specific data is subject to PDF, and the above content is for reference

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