EMFB232A1MA-DV-F-D

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Memory is an important component of computer systems, and the EMFB232A1MA-DV-F-D is one type of memory available. This particular memory is a two port SRAM that operates on a 3.3-volt supply voltage. It is designed to provide reliable, high-speed storage of data and codes in consumer electronic products. This article will discuss the application field and working principle of the EMFB232A1MA-DV-F-D.

Application Field

The EMFB232A1MA-DV-F-D is a versatile SRAM that can be used in a variety of consumer electronic applications. It is optimized for use in digital still cameras, personal digital assistants (PDAs), mobile phones, cellular base stations, and other handheld electronic devices. It also finds applications in network equipment, digital TV set-top boxes, password-protected computing devices, and automotive controllers.

In addition to its primary use as a data and code storage device, the EMFB232A1MA-DV-F-D can be used as a data bus buffer memory and/or a general-purpose memory in ASIC and FPGA applications. It is also suitable for use as a cache memory in high-speed microprocessors.

Working Principle

The EMFB232A1MA-DV-F-D is a two-port Static RAM (SRAM) device. It is organized as 256Kx16 and functions using a 3.3V single supply voltage. The device consists of two independent ports (Port A and Port B) with separate control inputs and data I/O pads. Data can be written to and read from both ports independently. The data on each port can be as wide as 16 bits.

The EMFB232A1MA-DV-F-D is a synchronous SRAM. It uses a clock signal to control when data is read from and written to the memory chip. This clock signal can be provided either externally via a signal pad, or internally by connecting an on-chip programmable oscillator circuit.

The EMFB232A1MA-DV-F-D has built-in error detection and correction (EDAC) logic, allowing it to detect and correct data errors that may occur due to environmental noise or other factors. The EDAC logic compares the data to be written with the data already stored in the SRAM, and if there is a mismatch, it will correct the data before writing it to the memory chip.

The EMFB232A1MA-DV-F-D is designed to operate from a standard 3.3V power supply. It has an integrated level-shifting circuit that allows it to interface with logic levels between 1.4V and 1.8V. The device also has built-in standby and active power modes, allowing it to enter a low-power standby mode when not in use.

The EMFB232A1MA-DV-F-D is a low-power device and has a nominal active current of only 15mA. The standby current is much lower, at 0.3mA. It is also very reliable with a write endurance of 1 million cycles and a data retention of 10 years.

In summary, the EMFB232A1MA-DV-F-D is a powerful two-port static RAM designed to provide reliable, high-speed data and code storage in consumer electronic applications. Its low power consumption and EDAC logic make it well-suited for mobile and handheld applications, while its versatile interface and programmable oscillator make it a great choice for automotive and general-purpose memory applications.

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