ESD110B102ELE6327XTMA1 Circuit Protection |
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Allicdata Part #: | ESD110B102ELE6327XTMA1TR-ND |
Manufacturer Part#: |
ESD110B102ELE6327XTMA1 |
Price: | $ 0.06 |
Product Category: | Circuit Protection |
Manufacturer: | Infineon Technologies |
Short Description: | TVS DIODE 18.5V 29V TSLP-2-20 |
More Detail: | N/A |
DataSheet: | ESD110B102ELE6327XTMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
15000 +: | $ 0.04788 |
30000 +: | $ 0.04479 |
75000 +: | $ 0.04119 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 18.5V (Max) |
Voltage - Breakdown (Min): | 20V |
Voltage - Clamping (Max) @ Ipp: | 29V |
Current - Peak Pulse (10/1000µs): | 2A (8/20µs) |
Power - Peak Pulse: | 58W |
Power Line Protection: | No |
Applications: | RF Antenna |
Capacitance @ Frequency: | 0.30pF @ 1MHz |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 0402 (1006 Metric) |
Supplier Device Package: | TSLP-2-20 |
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TVS - Diodes are an indispensable component in the electronics industry, and the ESD110B102ELE6327XTMA1 is one of the most important products in this family. This TVS diode is unique in that it comprises a combination of two semiconductor elements, a Zener diode and a high voltage diode, applied in parallel to the same device terminal.
When considering the application field of the diode, it can be considered in several contexts. Firstly, the device is specifically designed to work in consumer or commercial electronic product designs. Secondly, as an overvoltage protection component, it can be used in both consumer and commercial products. Additionally, the ESD110B102ELE6327XTMA1 diode can be used in applications such as motor controls, low-voltage power supplies, video display systems, telecommunication systems, radio frequency and microwave circuits, as well as in military and aerospace applications.
The working principle of the ESD110B102ELE6327XTMA1 TVS diode is based on the principles of both Zener and high voltage diodes. As is already known, a Zener diode is based on an avalanche breakdown effect, while a high voltage diode is based on the PN junction. Therefore, the ESD110B102ELE6327XTMA1 works on the combination of both breakdown effects, forming a stand-alone protection element with characteristics that are specifically tailored for each application.
In operation, the ESD110B102ELE6327XTMA1 diode keeps its avalanche breakdown mechanism in suppression until the incoming voltage exceeds a certain limit. At that point, the device conducts current and reduces the voltage below the breakdown point. Then, as the device voltage is reduced, so the high voltage diode begins to take over and keeps the voltage below the breakdown voltage.
The ESD110B102ELE6327XTMA1 diode is constructed from two parallel-connected diodes, which are located in the same device terminal. The device is designed to be used under normal operating conditions in order to be able to provide adequate protection against sudden overvoltage conditions. In addition, the device provides superior switching speeds, allowing it to respond quickly to overvoltage conditions.
In summary, the ESD110B102ELE6327XTMA1 diode is an excellent example of a TVS – Diode, combining the principles of both Zener and high voltage diodes in an optimal solution. With its combination of properties, it is an excellent device for a number of different applications, offering reliable protection against overvoltage conditions.
The specific data is subject to PDF, and the above content is for reference
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