| Allicdata Part #: | ESM3045DV-ND |
| Manufacturer Part#: |
ESM3045DV |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS NPN DARL 450V 24A ISOTOP |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 450V 24A... |
| DataSheet: | ESM3045DV Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 24A |
| Voltage - Collector Emitter Breakdown (Max): | 450V |
| Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 1.2A, 20A |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 20A, 5V |
| Power - Max: | 125W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | ISOTOP |
| Supplier Device Package: | ISOTOP® |
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The ESM3045DV is a single bipolar junction transistor (BJT) from the Transistors family of devices, and is mainly used in digital logic and amplifying applications. In this article, the application field and working principle of the ESM3045DV will be discussed.
The ESM3045DV is designed for low noise and linear amplifying applications, such as audio systems, high speed switching applications, and RF amplifiers. It is capable of operating at a record high frequency of 600 MHz, which makes it perfect for applications that require a fast switching time and response. The device has a low voltage drop of 0.7V when in saturation mode, which reduces the power consumption and heat dissipation significantly. The ESM3045DV achieves this efficiency while providing optimal current gain (hFE) of up to 500 at a collector current of 1mA.
The ESM3045DV works by significantly reducing the base current for a given base-emitter voltage. This is possible due to its advanced N-channel MOSFET technology, which provides improved surface area for enhanced conduction. The gate voltage is then reduced from its original value (which is usually around 10V) to its desired value by applying a gate-to-source voltage. This is used to control the resistance between the gate and drain, or between the source and drain. As the base current is reduced, the collector current increases and the saturation voltage (VCEsat) decreases. The result is a highly efficient and low-cost BJT device that is capable of providing a high current gain.
When the base current is increased, the device operates in active mode and the transistor acts as an amplifier. In this mode, the collector current is maintained constant by supplying current through the emitter. The amplified signal voltage is then dragged through the collector-emitter junction and output. Additionally, the ESM3045DV can be used to provide switched control of connected circuitry. In this mode, the voltage on the gate determines whether the device will be in “on” or “off” state. When the gate voltage is below the cut-off voltage, the device is “off” and no current can flow through the device. When the gate voltage is above the cut-off voltage, the device is “on” and current can flow through the device. This allows the device to be used for digital applications such as switching circuits.
The ESM3045DV provides a high current gain and low voltage drop, making it ideal for audio and high speed switching applications. This versatile device can be used to control many functions, from amplifying small audio signals to providing logic switching. With its low power consumption and high current gain, the ESM3045DV is a reliable choice for many digital and analog conduction applications.
The specific data is subject to PDF, and the above content is for reference
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ESM3045DV Datasheet/PDF