F1225R12KT4GBOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	25A
Power - Max:	160W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 25A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	1.45nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

F1225R12KT4GBOSA1 Application Field and Working Principle

Introduction

The F1225R12KT4GBOSA1 is a state-of-the-art insulated gate bipolar transistor (IGBT) module designed to provide lightning-fast IGBT switching speeds and higher-than-expected application performance. This insulated gate module offers the user a wide range of control options, including variable signal response time and improved thermal performance. The module also includes an improved layout that allows for higher switching frequencies and faster communications between the gate and emitter.

Application Field

The F1225R12KT4GBOSA1 module is a viable solution for many industrial applications. This module is typically used in medium-high power applications like wind turbines, aircraft systems, and electric vehicle DC/AC circuits. The module\'s efficient design and robust construction allow it to handle continuous output currents of up to 12 kA. Additionally, due to its insulated gate design, this module can handle voltage levels up to 1200 Volts.The F1225R12KT4GBOSA1 module can also be used for motor control and power conversion applications, such as electric motor speed controllers, power converter circuits, and inverters. In these types of applications, the module is either used as the main switch or as part of the control circuitry.

Working Principle

The F1225R12KT4GBOSA1 insulated gate module utilizes a field-effect transistor (FET) switching principle, which allows for high-frequency switching and increased power efficiency. This insulated gate module also provides an improved thermal performance, allowing it to handle higher voltages without damaging the circuits. The working principle of the F1225R12KT4GBOSA1 module is based on the insulated gate FET switching concept. The insulated gate module has two parts, an insulated gate and an emitter. The insulated gate module is designed to provide an enhanced level of control when switching current through a circuit, and an improved response time.When a voltage is applied to the gate, the FET switch turns on and allows current to flow between the emitter and the gate. As current flows through the module, a current wave is created that adds to the transfer of power in the circuit. The wave\'s characteristics and response time will depend on the type of IGBT module and the load characteristics that are present.

Conclusion

The F1225R12KT4GBOSA1 insulated gate module is an excellent choice for many industrial applications due to its versatile design and improved switching response time. The module\'s versatile design is well-suited for medium-high power applications like wind turbines, aircraft systems, and electric vehicles. The module can also be used for motor control and power conversion applications where its insulated gate FET switching principle provides an improved thermal performance of up to 1200 Volts. The increased response time allows for more efficient energy transfer, making it a great choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description