Allicdata Part #: | 425-2461-ND |
Manufacturer Part#: |
F320BJHEPTTL60 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Sharp Microelectronics |
Short Description: | IC FLASH 32M PARALLEL 48TSOP |
More Detail: | FLASH - Boot Block Memory IC 32Mb (4M x 8, 2M x 16... |
DataSheet: | F320BJHEPTTL60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - Boot Block |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 60ns |
Memory Interface: | Parallel |
Voltage - Supply: | -- |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.488", 12.40mm Width) |
Supplier Device Package: | 48-TSOP |
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Memory technology is evolving rapidly, and the F320BJHEPTTL60 is a great example of the advances in the sector. This high-performance memory chip provides significant improvements over the older generation of memory chips and can be used in a wide range of applications.
The F320BJHEPTTL60 is a fourth-generation, asynchronous SRAM module with a wide range of features to offer. It has a capacity of 60Mbit, with a high access speed of 8.5 ns. It is also optimized for demanding applications and is compliant with the JEDEC and Open SDRAM standards. It is available in both commercial and industrial temperature ranges.
The F320BJHEPTTL60 is designed for use in a variety of applications including high- performance computing and communications, automotive, and embedded systems. It is an ideal solution for applications requiring high speed and high capacity data storage and retrieval. This makes it an excellent choice for applications such as video and audio processing, machine vision, and data center networking.
The F320BJHEPTTL60 offers a number of features that make it an ideal choice for a wide range of applications. It has an integrated error-correction code (ECC) that allows for more reliable retrieval of data. It also features a burst mode that allows for higher data throughput rates. Additionally, it has low-power operation and improved EMI performance.
The F320BJHEPTTL60 works on the principle of dynamic random-access memory (DRAM). DRAM is a type of volatile memory that stores data in the form of electrical charges. It is a memory that requires the application of voltage in order to maintain its contents. The F320BJHEPTTL60 employs row activation and column selection techniques to access data stored in its cells. The row addresses are directly applied to the cell array, and data is retrieved from the column selected from the row.
The F320BJHEPTTL60 has several advantages over traditional memory chips. It is designed for high reliability, with a lower failure rate than traditional SRAM. It is also more power-efficient than other types of memory chips. The high access speeds and low power consumption make it a ideal choice for applications requiring high speed and low power operation.
The F320BJHEPTTL60 is an advanced memory chip that delivers an improved performance and reliability over traditional DRAM and SRAM chips. It is an ideal solution for applications requiring high speed and large capacity data storage and retrieval. It is available in a variety of package types and is compliant with both JEDEC and Open SDRAM standards.
The specific data is subject to PDF, and the above content is for reference
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