F3L200R12W2H3PB11BPSA1

Series:	*
Part Status:	Active

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IntroductionF3L200R12W2H3PB11BPSA1 is an insulated gate bipolar transistor (IGBT) module. This device is designed for applications such as inverters, motor drives, solar power converters, uninterruptible power supplies, and automotive systems. It is rated for 200 A at an inductive load of 12 V.FeaturesThe F3L200R12W2H3PB11BPSA1 IGBT module has a wide power range with a current capacity of up to 200 A and a voltage rating of up to 12 V. This device can operate up to 200 kHz and is suitable for high-frequency applications. The module also includes built-in protection features such as under-voltage lockout, current limiting, and thermal protection.Application FieldThe F3L200R12W2H3PB11BPSA1 IGBT module can be used for a variety of applications. It is commonly used for applications such as motor drives, inverters, solar power converters, uninterruptible power supplies, and automotive systems. It is suitable for both low-voltage and high-voltage applications. The device can also be used for other applications such as power electronics, HVAC systems, renewable energy systems, and UPS systems.Working PrincipleThe F3L200R12W2H3PB11BPSA1 IGBT module works by combining an insulated gate bipolar transistor (IGBT) and a conventional MOSFET in a single package. The IGBT acts as a switch and the MOSFET acts as the body diode to provide protection against voltage spikes or over-current conditions.When the gate voltage of the IGBT is low, the transistor is in the off state. This means that no current will flow through the device. When the gate voltage is increased, the transistor enters the conducting state and current can flow through the device. In this state, the IGBT acts as a variable resistor, allowing the current to be controlled by the applied gate voltage.The MOSFET acts as a body or reverse diode in order to provide protection against high-voltage spikes. When a voltage spike occurs, the body diode will conduct and provide a path for the current to flow, thereby limiting the potential for damage due to over-voltage conditions.ConclusionThe F3L200R12W2H3PB11BPSA1 IGBT module is designed for applications such as motor drives, inverters, solar power converters, uninterruptible power supplies, and automotive systems. It offers a wide power range with a current capacity of up to 200 A and a voltage rating of up to 12 V. This device works by combining an IGBT and a MOSFET in a single package. The IGBT acts as a switch while the MOSFET acts as the body diode to provide protection against voltage spikes or over-current conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description