Allicdata Part #: | F3L50R06W1E3B11BOMA1-ND |
Manufacturer Part#: |
F3L50R06W1E3B11BOMA1 |
Price: | $ 26.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 50A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | F3L50R06W1E3B11BOMA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 24.30010 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 175W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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As transistors, IGBTs are able to switch between two different states, depending on the input stimuli. As a module, F3L50R06W1E3B11BOMA1 IGBTs are designed to meet the needs of specific applications, including inverters, motor control, industrial and consumer energy power conversion.
How F3L50R06W1E3B11BOMA1 IGBTs Work
F3L50R06W1E3B11BOMA1 IGBTs are a type of Field-Effect Transistor (FET) that combines the properties of a bipolar junction transistor (BJT) and a metal–oxide–semiconductor field-effect transistor (MOSFET). These transistors have two terminals that can be connected directly to the external circuit and a gate for controlling the input signals.
The behavior of the F3L50R06W1E3B11BOMA1 IGBT can be described as follows. When the gate voltage reaches a certain threshold (Vgs(th)), the current flow through the device increases exponentially and it reaches a high current state. On the other hand, if Vgs is below Vgs(th), the current flow through the device is reduced to an extremely small value and it reaches a low current state.
Advantages of F3L50R06W1E3B11BOMA1 IGBTs
F3L50R06W1E3B11BOMA1 IGBTs offer several advantages over other transistors, including:
- Low switching losses: F3L50R06W1E3B11BOMA1 IGBTs have lower switching losses than traditional BJTs, improving system efficiency.
- Low gate-drive power: Compared to MOSFETs, F3L50R06W1E3B11BOMA1 IGBTs require only a small gate-drive power to operate, allowing for lower power consumption.
- Longer life: F3L50R06W1E3B11BOMA1 IGBTs have longer life than other transistors due to their reduced switching losses, allowing for a longer product cycle.
- Improved reliability: By eliminating the need to use gate resistors, F3L50R06W1E3B11BOMA1 IGBTs offer improved reliability, as they are immune to noise and interference.
F3L50R06W1E3B11BOMA1 Application Fields
F3L50R06W1E3B11BOMA1 IGBTs have a wide range of applications, such as:
- Inverter control: F3L50R06W1E3B11BOMA1 IGBTs can be used for controlling the voltage and frequency of an inverter.
- Motor control: F3L50R06W1E3B11BOMA1 IGBTs can be used in motor control systems for controlling different properties of the motor, such as speed, torque, temperature, and position.
- Industrial and consumer energy power conversion: F3L50R06W1E3B11BOMA1 IGBTs can be used to convert power from one type of energy to another, such as converting AC power to DC power or vice versa.
- Battery power systems: F3L50R06W1E3B11BOMA1 IGBTs can be used in battery power systems to ensure optimal performance by controlling the charge and discharge of the battery.
Conclusion
F3L50R06W1E3B11BOMA1 IGBTs are widely used in many areas, from industrial applications to consumer electronics. These transistors have several advantages over other types of transistors, making them an ideal choice for many applications. By combining the properties of BJTs and MOSFETs, F3L50R06W1E3B11BOMA1 IGBTs are an innovative and reliable solution for switching and control needs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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F3L50R06W1E3B11BOMA1 | Infineon Tec... | 26.73 $ | 1000 | IGBT MODULE VCES 600V 50A... |
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