F3L75R12W1H3B11BPSA1

Series:	EasyPACK™ 1B
Part Status:	Active
IGBT Type:	--
Configuration:	Single Chopper
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	45A
Power - Max:	275W
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 30A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	4.4nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction to F3L75R12W1H3B11BPSA1

F3L75R12W1H3B11BPSA1 is a module type IGBT (insulated gate bipolar transistor) manufactured by Infineon Technologies. It uses NPT technology (non-punch through) which guarantees low EMI (electromagnetic interference) levels in the application. It is suitable for use in a wide range of applications such as general motor drive, servo drive, welding, uninterruptible power supplies (UPS) and photovoltaic inverters.

Application Fields

F3L75R12W1H3B11BPSA1 is a versatile IGBT module and can be used in a variety of applications such as AC and DC motor control, welding, UPS and photovoltaic inverters. It is often used in drives, servo motors, UPS and inverter applications, due to its low switching losses and integrated fast freewheeling diodes. It can also be used in AC and DC motor control systems, power converser, welding inverters and solar inverters.

Working Principle

F3L75R12W1H3B11BPSA1 is a non-punch through (NPT) type IGBT module. It consists of two IGBTs with an integrated fast recovery diode. It is a fast switching device with a minimum load current for the IGBTs of 75A and with a power range of 75 A/1200V. The working principle of F3L75R12W1H3B11BPSA1 is similar to that of regular IGBTs. It is a three terminal device that can be operated in either saturation or cut-off mode. When the gate voltage (Vg) is applied to the IGBT, it enters the saturated mode and current flows between the collector and emitter terminals of the IGBT, allowing the device to act as a switch. When the gate voltage is removed, the device enters the cut-off mode and current flow between the collector and emitter terminals is stopped, thereby blocking the current path. In addition, the integrated fast recovery diode allows the current to flow through the diode, when the IGBT is in the cut-off mode, thus providing a path for the current to flow.

Conclusion

F3L75R12W1H3B11BPSA1 is a versatile IGBT module that can be used in a variety of applications. It can be used in AC and DC motor control systems, power converters, welding inverters and solar inverters. It uses NPT technology which allows for low EMI levels in the application. It also has integrated fast freewheeling diodes which allow for fast switching with minimal losses. It is a three-terminal device which can be operated in either saturation or cut-off mode. With its low switching losses and integrated fast recovery diode, it is ideal for use in drives, servo motors, UPS and inverter applications.

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