Allicdata Part #: | F4100R06KL4BOSA1-ND |
Manufacturer Part#: |
F4100R06KL4BOSA1 |
Price: | $ 76.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Half Bridge 600V 130A 430W Chassis Mo... |
DataSheet: | F4100R06KL4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 69.46440 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 130A |
Power - Max: | 430W |
Vce(on) (Max) @ Vge, Ic: | 2.55V @ 15V, 100A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The F4100R06KL4BOSA1 is a high-performance insulated gate bipolar transistor (IGBT) module which is used in a wide range of applications. The module consists of four IGBTs along with their associated gate driver and power diodes, all in a single package.
The module has been designed to offer high power density and excellent switching characteristics, making it ideal for applications in motor control, renewable energy, and intelligent power control. The module is capable of delivering up to 1600 watts at a collector current of 600A and on-state voltage of 600V. A high blocking voltage of 1200V and low gate drive current of 200mA makes it very suitable in power switch applications.
The working principle of an IGBT module is straightforward. The IGBTs are connected to the power supply line, allowing the gate driver to control the current flow through the module. The gate driver, which is typically an integrated circuit, provides the necessary signals to the IGBTs to control the voltage and current levels of the power supply.
The switching speed of the IGBTs is controlled by the gate driver, and the switching frequency is typically in the range of tens of kHz. When the gate driver is activated, the voltage is applied to the IGBTs, leading to a high-speed conduction of current. This current is used to control the power supply, either opening or closing the power switches. The IGBT module also acts as a buffer to reduce the input voltage ripple and improve the power supply efficiency.
The F4100R06KL4BOSA1 is a great choice for applications that require high power density, excellent performance, and reliability. This IGBT module is able to provide the necessary control and switching capabilities in a wide range of applications. Its high current and voltage ratings, low gate drive current, and high switching speed make it suitable for use in a variety of different power switch applications.
The F4100R06KL4BOSA1 is an ideal choice for applications that require high power density, reliable performance, and efficient power supply operation. The module offers excellent switching characteristics and high switching speeds, which make it suitable for a wide range of applications in motor control, intelligent power control, and renewable energy sectors.
The specific data is subject to PDF, and the above content is for reference
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