Allicdata Part #: | F4200R17N3E4BPSA1-ND |
Manufacturer Part#: |
F4200R17N3E4BPSA1 |
Price: | $ 148.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | LOW POWER ECONO |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1700V 20... |
DataSheet: | F4200R17N3E4BPSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 135.02200 |
Series: | EconoPACK™ 3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 200A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 18nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The F4200R17N3E4BPSA1 is an IGBT module designed to provide great performance in various applications. It has a very high switching speed, allowing it to power large loads quickly and efficiently. It also has low noise and low distortion, which makes it an ideal choice for applications that require clean and reliable power.
The F4200R17N3E4BPSA1 is capable of handling both alternating current (AC) and direct current (DC) loads. It is designed with a built in protection circuit that prevents the module from overloading or getting damaged due to high current and voltage. This makes it safe to use in any environment, and it can handle temperatures ranging from -25°C to +150°C. Additionally, it is RoHS certified, making it suitable for environmentally friendly applications.
The F4200R17N3E4BPSA1 is typically used in motor control and drives, lighting, solar and wind power, industrial machines and other equipment requiring power control. It is also an ideal choice for applications requiring high power density, such as induction heating, laser processing and welding machines.
The working principle of the F4200R17N3E4BPSA1 is based on the IGBT (insulated gate bipolar transistor) technology. The IGBT is formed using one N-type and one P-type semiconductor materials. When a voltage is applied across the gate of the IGBT, the electrical current passes through the N-type and P-type materials to form a "channel", or path, for the current to flow. This allows the F4200R17N3E4BPSA1 to deliver high current, accurate and fast control of the load.
The F4200R17N3E4BPSA1 is designed with a built-in optimized driver circuit that reduces the losses and allows for higher switching accuracy and speed. This also protects the device from voltage surges, for added safety. The module also includes a built-in voltage drop-out protection circuit, which ensures that the output voltage remains within the regulated margin, even when there is a significant load change.
Overall, the F4200R17N3E4BPSA1 provides excellent performance and reliability in a wide range of applications. Its high switching speed and low noise make it an ideal choice for motor control and drives, lighting, solar and wind power, industrial machines and other power control applications. The built-in protection circuits make it safe to use in any environment, and the device is designed to withstand temperatures ranging from -25°C to +150°C. Therefore, the F4200R17N3E4BPSA1 is a great choice for applications requiring high power density, accurate and fast control of the load.
The specific data is subject to PDF, and the above content is for reference
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