Allicdata Part #: | 425-1877-ND |
Manufacturer Part#: |
F640BFHEPTTL70A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Sharp Microelectronics |
Short Description: | IC FLASH 64M PARALLEL 48TSOP |
More Detail: | FLASH Memory IC 64Mb (4M x 16) Parallel 70ns 48-T... |
DataSheet: | F640BFHEPTTL70A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 64Mb (4M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | -- |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
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Memory is an important component in any computer system, and F640BFHEPTTL70A is a type of memory that is widely used in many applications. This article will look at the application field and working principle of F640BFHEPTTL70A memory.
Application field of F640BFHEPTTL70A memory
F640BFHEPTTL70A memory is widely used in various applications. It is mainly used in desktop computers, laptop computers, workstations, servers, and embedded systems. It can also be used in gaming consoles, digital audio and video equipment, and medical equipment. Due to its high performance, it is also often used in high-end applications such as military and aerospace. This type of memory is also widely used in automotive applications due to its low power consumption, high speed, and excellent reliability.
Working principle of F640BFHEPTTL70A memory
F640BFHEPTTL70A memory is a type of flash-based non-volatile RAM that uses FETs (field-effect transistors) as memory cells. This type of memory is extremely reliable and has a long data retention period. In order to make the FETs non-volatile, an isolation layer is built between each of the FETs. This isolation layer helps to prevent the electrons from leaking from the FETs. The FETs are arranged in a matrix form in order to increase the data storage capacity. The data is stored in the form of charges on the FETs. The charge state of the FETs can be changed by applying electric pulses to them.
The data can be written to and read from the memory by applying appropriate voltages to the FETs. Furthermore, since the data is stored as electric charges, there is no need to refresh the memory in order to maintain data integrity. This makes F640BFHEPTTL70A memory ideal for use in applications that require long periods of continuous operation. The low power consumption of this type of memory also makes it ideal for use in mobile applications.
In conclusion, F640BFHEPTTL70A memory is a type of flash-based non-volatile RAM that is widely used in many applications. It is highly reliable and has a long data retention period. Furthermore, it is energy efficient, making it ideal for use in mobile applications. Its wide range of applications, combined with its excellent performance, make it a very popular choice for many computer systems.
The specific data is subject to PDF, and the above content is for reference
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