
Allicdata Part #: | FB20R06KL4B1BOMA1-ND |
Manufacturer Part#: |
FB20R06KL4B1BOMA1 |
Price: | $ 35.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR EASY2-1 |
More Detail: | IGBT Module |
DataSheet: | ![]() |
Quantity: | 1000 |
20 +: | $ 31.84210 |
Series: | * |
Part Status: | Not For New Designs |
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Transistors - IGBTs - Modules
FB20R06KL4B1BOMA1 Application Field and Working Principle
The FB20R06KL4B1BOMA1 is an insulated gate bipolar transistor (IGBT) module. It is a very commonly used power device in many application fields due to its superior performance in areas such as low power switching, motor control, and resonant mode conversion. To understand the performance of the FB20R06KL4B1BOMA1 and its application fields, it is important to understand its working principle.
Gating Mechanism
An IGBT is essentially a combination of a MOSFET (metal-oxide semiconductor field-effect transistor) and a bipolar junction transistor, or BJT. The FB20R06KL4B1BOMA1 utilizes a three-terminal gate configuration: an anode (+) terminal, a cathode (-) terminal, and a gate (G) terminal. The operation of an IGBT is based on a junction between the MOSFET channel and the BJT base, influenced by a signal applied to the gate terminal. A voltage signal applied to the gate terminal triggers a gate current which will increase the conductivity between the MOSFET channel and the BJT base, allowing current to flow between the anode and the cathode. On the other hand, a logic signal applied to the gate terminal lowers the conductivity between the MOSFET channel and the BJT base, which will drop the current between the anode and the cathode.
Features of FB20R06KL4B1BOMA1
The FB20R06KL4B1BOMA1 module offers a very reliable, low loss operation that makes it suitable for various applications. It offers a low on-state voltage (1.5V), a high temperature rating of 175°C, and low electromagnetic emissions. Furthermore, it has a high current gain for high power devices, making it suitable for high power switching applications. It also offers great switching frequencies for motor control, as well as resonant mode conversion. This makes the FB20R06KL4B1BOMA1 a great choice for various applications.
Application Fields of FB20R06KL4B1BOMA1
Due to its superior performance, the FB20R06KL4B1BOMA1 is a very popular choice for various applications. It is a great choice for low power switching applications, such as lighting, automatic test equipment and medical equipment. Furthermore, it is very suitable for motor control due to its great switching frequencies and low on-state voltage. The FB20R06KL4B1BOMA1 module is also a great choice for resonant mode conversion applications due to its high current gain and low electromagnetic emissions. With its superior performance and reliability, the FB20R06KL4B1BOMA1 module is a great choice for many applications.
Conclusion
The FB20R06KL4B1BOMA1 is a very reliable and cost-effective insulated gate bipolar transistor (IGBT) module. It offers superior performance in areas such as low power switching, motor control and resonant mode conversion. Furthermore, its low on-state voltage, high temperature rating and low electromagnetic emissions make it a very suitable choice for many applications. Finally, its high current gain makes it a great choice for high power switching applications.
The specific data is subject to PDF, and the above content is for reference
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P170NPD-FB20BR100K | TT Electroni... | 0.29 $ | 1000 | POTENTIOMETEROhm Gang ... |
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