
Allicdata Part #: | FD16001200R17HP4KB2BOSA1-ND |
Manufacturer Part#: |
FD16001200R17HP4KB2BOSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IHV IHM T XHP 33-65K |
More Detail: | IGBT Module Dual Brake Chopper 1700V 1600A 1050W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Dual Brake Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 1600A |
Power - Max: | 1050W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 1600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 130nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Today, power and energy solutions that have lower output power and higher efficiency are needed more than ever. To answer this need for greater efficiency, many solutions use insulated gate bipolar transistors (IGBTs). IGBTs are power components that provide higher output power and correspondingly higher efficiency when compared to traditional power semiconductors like BJTs. As such, they have become popular in many applications, particularly in the industrial market.
Among IGBTs, the FD16001200R17HP4KB2BOSA1 module is becoming increasingly popular due to its impressive efficiency and power output. This particular module is a 1600A, 1200V device capable of 2-level switching on a single IGBT, allowing it to achieve an efficiency of up to 97%.
The main application field for the FD16001200R17HP4KB2BOSA1 module is power and energy solutions such as motor drives and inverters. In these applications, the module is used to convert electrical power from one form to another. This offering from Mitsubishi Electric effectively eliminates losses with its superior switching efficiency.
The FD16001200R17HP4KB2BOSA1 module works on the principle of insulated gate bipolar transistors. IGBTs are semiconductor devices with three terminals - a gate, collector and emitter - and have the primary advantage that they have higher current density, low gate drive current, and fast switching time when compared to other devices. This makes them ideal for use in high-power applications.
Powering up the module is very simple. The device needs to be connected to an alternating current (AC) power supply, with the gate terminal connected to the gate driver circuit. The gate driver then sends a pulse signal to the IGBT switch, which allows it to turn on. When the switch is turned on, current passes from the collector to the emitter, and the device then starts to operate.
The FD16001200R17HP4KB2BOSA1 module is also equipped with many features like short-circuit protection, over-temperature protection, and soft switching, making it an excellent choice for various different applications. These features help to make the system more reliable and improve the overall performance.
In conclusion, the FD16001200R17HP4KB2BOSA1 module is a great choice for many power and energy solutions including motor drives and inverters. The module offers high efficiency and a host of features that make it well-suited for these types of applications. With its IGBT technology, it provides an easy-to-use and reliable switching solution for many applications.
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