Allicdata Part #: | FD400R12KE3B5HOSA1-ND |
Manufacturer Part#: |
FD400R12KE3B5HOSA1 |
Price: | $ 93.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 400A |
More Detail: | IGBT Module Trench Field Stop Single Chopper 1200V... |
DataSheet: | FD400R12KE3B5HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 84.95970 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 580A |
Power - Max: | 2000W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 28nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FD400R12KE3B5HOSA1 is an Insulated Gate Bipolar Transistor (IGBT) module, made of high voltage switches. It is suitable for adjustable frequency drives, wind generation and other applications. This module is designed to deliver improved reliability, high power density, fast switching and superior EMI performance.
The FD400R12KE3B5HOSA1 module is a three phase unit that is offered in a molded IPM design with 1200V blocking voltage and 1250A high surge current. It has a higher power efficiency and improved light-load efficiency when compared to other IGBTs. The device also has excellent EMI performance, which is important for modern high-power applications. In addition, the device is designed to provide high-power density, fast switching speed, and improved reliability.
When it comes to working principle, theFD400R12KE3B5HOSA1 module works on the principle of activated switching, inspired by the gate drive technology. The gate drive technology turns the transistor on or off. When the gate of a transistor has sufficient current, it becomes activated and the current can flow through it. On the other hand, when the gate of the transistor has insufficient current, it becomes inactive and no current can pass through it. This is how the FD400R12KE3B5HOSA1 module works.
Typically, the FD400R12KE3B5HOSA1 module is used in applications such as adjustable frequency drives, frequency inverters, field oriented drives, solar inverters, and wind turbine generators. It is also suitable for use in temperature controllers and motorsi n medical and process control applications. The device is used in automotive, telecom, IT and industrial automation applications. The device provides an ideal combination of low on-state voltage drop and low switching losses.
In conclusion, the FD400R12KE3B5HOSA1 module is an insulated gate bipolar transistor which is suitable for adjustable frequency drives, wind generation and other applications. The module is designed to provide improved reliability, high power density, fast switching speed and excellent EMI performance. It works on the principle of activated switching and can be used in motor control, frequency inverters, solar inverters, and wind turbine generators.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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