FD650R17IE4BOSA2

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IGBT (Insulated Gate Bipolar Transistor) modules are designed to replace high voltage bipolar transistors. Utilizing the latest IGBT technology, these modules offer superior advantages and features. The FD650R17IE4BOSA2 is an IGBT module engineered for use in many industrial applications. This article will cover the application field and working principle of the FD650R17IE4BOSA2.

Application Field

The FD650R17IE4BOSA2 is a high power module with a CIB (converter integrated circuit) structure. It is rated at 650A, 17kV voltage and suitable for applications involving heavy machinery, motion control and energy conversion. It has a non-punch through (NPT) structure, which reduces the internal parasitic resistance and improves the current carrying capacity. It is ideal for welding, motor control, elevator control and power transmission purposes.

The FD650R17IE4BOSA2 has a very high power density and is capable of handling high frequency switching. It also has an excellent thermal design, allowing it to maintain a high switching performance in extreme conditions. The module is equipped with a pressure contact, providing a highly reliable connection between the electronic devices and the IGBTs. It features a diode with fast reverse recovery, eliminating the need for additional rectifying diodes in the system.

Working Principle

The FD650R17IE4BOSA2 IGBT module operates on the principle of bipolar transistors with an insulated gate bipolar transistor (IGBT). This combination of bipolar transistors and IGBTs, provide high speed switching and great efficiency. The module is designed to work with high frequency signals and switch them with precision. It uses a power semiconductor device to control current flow between the two electrodes.

To control the FD650R17IE4BOSA2, a gate voltage is applied to the IGBT gate and an inverse gate voltage is applied to the diode gate. This induces a high current carrying capacity in the IGBTs and a low operating voltage in the diodes. The IGBTs and the diodes are connected in a three phase bridge circuit and work together to regulate the flow of current. The resulting circuit is highly efficient and is capable of handling high frequency signals.

The FD650R17IE4BOSA2 IGBT module is highly reliable and offers many advantages over its predecessors. Its high power density and fast switching capabilities make it an ideal choice for industrial applications. It is also highly efficient, with a low internal resistance and a high current carrying capacity. Its excellent thermal design ensures a reliable performance in extreme conditions, making it suitable for use in a wide variety of industrial and motion control applications.

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