FF50R12RT4HOSA1

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FF50R12RT4HOSA1

FF50R12RT4HOSA1 is an InGaP-HBT IGBT module in a power Metal-oxide-semiconductor Field-Effect Transistor (MOSFET) package. It is designed to enhance the efficiency, power, and speed of power electronic applications. The ff50R12RT4HOSA1 comes in a range of current ratings from 60 to 250A, with a maximum temperature operating range of between -40° and +150°C.

Application Field

The FF50R12RT4HOSA1 is a leading-edge technology MOSFET IGBT module, designed to enable significantly higher power levels, increased efficiency, and higher frequencies. It is therefore suitable for a wide range of high-performance applications, such as automotive, industrial, consumer and computer power systems, AC/DC converters, and telecom. This IGBT module is particularly well suited to harsh environment applications, where superior thermal management and a wide range of switching frequencies are required.

Working Principle

An IGBT is a combination of a power MOSFET and a bipolar transistor. It combines the high voltage handling capability of the bipolar transistor with the high frequency switching speed of the power MOSFET. Because of this combination, an IGBT can switch faster and with higher efficiency than a conventional power MOSFET. The FF50R12RT4HOSA1 has a fast switching rate, which makes it suitable for applications that require high frequency conversion.

The FF50R12RT4HOSA1 is built from an InGaP-HBT structure that maximizes gate charge and output current without sacrificing power dissipation. It is provided with an external gate resistor and an output diode to guarantee safe operability. It also features an integrated charge pump (ICP) to protect against gate voltage fading.

The FF50R12RT4HOSA1 is designed to deliver superior performance in a wide range of power applications. It features an instantaneous temperature protection (ITP) system, which is designed to protect the module against short-term over temperature conditions, ensuring a high degree of safety and reliability.

Conclusion

The FF50R12RT4HOSA1 is an advanced MOSFET IGBT module that is designed to provide superior performance, efficiency, and power in a variety of power applications. The module is provided with an external gate resistor and an output diode to ensure safe operation, and also includes an integrated charge pump and an instantaneous temperature protection system for increased safety and reliability.

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