FF75R12RT4HOSA1

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FF75R12RT4HOSA1 Application Field and Working Principle

FF75R12RT4HOSA1 is an Insulated Gate Bipolar Transistor (IGBT) Module manufactured by ON Semiconductor. It is primarily used in inverter applications such as inverters for air handling units and variable frequency drives. The module offers a wide range of operating temperature ranges up to 200°C and is outfitted with a heat sink base and fan to dissipate heat. This makes it suitable for harsh industrial environments.

The FF75R12RT4HOSA1 is designed using four field-stop IGBTs and four fast body-diodes. The IGBTs are formed by the interlayer dielectric of two doped silicon layers, one N-type and one P-type. The N-type layer where the current flows when an electric field is applied is called the Emitter. The P-type layer is called the Collector. The junction between the two layers is called the Gate region.

In the FF75R12RT4HOSA1, the Gate is insulated from the Emitter and Collector with a layer of SiO2. When an electric current is applied to the Gate region, it creates an electric field that modulates the current flow from the Emitter to Collector. This modulation is what allows the IGBT to switch rapidly and with efficiency between "On" and "Off" states for controlling the output power.

The FF75R12RT4HOSA1 module has several key characteristics and performance features. It offers a continuous DC current of up to 180A, a switchover frequency of up to 47kHz, a maximum allowable power of 6800W and an operating temperature range of -40°C to 200°C. It also has a low on-state voltage drop of 2.6V and a dielectric isolation voltage of 3600V.

All these features make the FF75R12RT4HOSA1 an ideal choice for industrial inverters and variable frequency drives with high output power and operating temperature requirements. The module combines the fast switching speed and low on-state voltage drop of IGBTs with the efficiency and cost-effectiveness of integrated modules, making it an attractive choice for a variety of power control applications.

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