FF800R12KF4

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IGBT stands for Insulated Gate Bipolar Transistor and is a combination of both a bipolar and a field effect transistor. It is used in power electronics circuits and serves primarily as a power switch. The FF800R12KF4 from Infineon is a power module based on the IGBT technology. It can be used for various applications such as motor control, power conversion, uninterruptible power supplies and frequency converters.

FF800R12KF4 Application Field

The FF800R12KF4 is mainly designed for use in medium and large power inverter applications including AC/DC, DC/AC and DC/DC inverters. It is also suitable for motor control applications, variable speed drives and uninterruptible power supplies (UPS). The FF800R12KF4 is a cost-effective solution that provides an integrated circuit to control IGBTs, while also providing additional benefits such as simplified programming and optimized thermal behavior.

The FF800R12KF4 module is designed for use in applications that require high currents up to 800A. It has a rated isolation voltage of 1700V, and a maximum junction temperature of 150°C. In addition, it has a 950V blocking voltage and can operate at frequencies up to 6kHz. This makes it suitable for various high-power applications such as railway vehicles, energy storage systems, and wind and solar energy conversion.

FF800R12KF4 Working Principle

The FF800R12KF4 module is based on IGBT technology, which combines two transistors in a single package to provide excellent power switching performance. The module is composed of four IGBT chips bonded together, as well as four integrated gate drive circuits. The four IGBTs are connected in series, forming a power bridge circuit that provides higher switching speeds and higher output voltages. The four gate-drive circuits are also connected in series and provide the gate voltage needed to turn the IGBTs on or off.

The module also features gate turn-off (GTO) control, which allows the user to control the IGBTs using a simple logic signal. This logic signal is used to pre-charge and discharge the IGBT gates, allowing for more precise control over the IGBTs. The FF800R12KF4 can also be operated in either half bridge or full bridge topologies for a better stability and greater power delivery.

The FF800R12KF4 module is also capable of soft switching operation, allowing for reduced losses and higher efficiency. Soft switching operation is achieved by controlling the IGBT gates with pulse width modulation (PWM). This allows the IGBTs to switch with less voltage and current surges, which reduces losses and improves the overall performance.

The FF800R12KF4 module is an optimized solution fo”r IGBT power applications. It combines the advantages of both IGBT technology and integrated gate drive circuits in a single package, providing a cost-effective solution for medium and large power inverters and motor control applications.

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