FGA70N30TDTU Discrete Semiconductor Products

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The FGA70N30TDTU is a part of the FGA series of IGBT transistors manufactured by Fairchild Semiconductor. It is a fast, power cycler-class N-channel insulated gate-bipolar transistor (IGBT). As with all IGBTs, the FGA70N30TDTU is designed to be used in applications where a high-power density and fast switching are required. In particular, the FGA70N30TDTU can be used in applications such as motor controls, heating elements, and high-speed drives.

As an N-channel IGBT, the FGA70N30TDTU operates by controlling the flow of electrons through an insulated gate dielectric between an N-type material and a P-type material. The IGBT is turned on by applying a positive voltage to the gate and a negative voltage to the source. When the gate voltage is reduced to zero, the conductivity and current of the device is reduced, allowing it to be turned off. This ability to be switched on and off quickly and accurately makes the FGA70N30TDTU an ideal component for high-speed and high-power applications.

When it comes to choosing the correct IGBT for an application, there are several factors that must be taken into consideration. The first is the power requirements of the application. The FGA70N30TDTU has a nominal collector current of 70A, a drain-source voltage of 30V and a typical maximal current of 160A. This indicates that it is suitable for applications that require significant current and voltage.

The second factor is the switching speed of the component. The FGA70N30TDTU has a typical turn-on time of 30ns and a typical turn-off time of 50ns. This makes it suitable for applications where fast switching is required. Additionally, the FGA70N30TDTU has a typical junction capacitance of 1.8nF and an input capacitance of 5.3nF. This indicates that it is able to swiftly and accurately change the state of current in response to input signals.

The third factor to consider is the maximum current and voltage ratings of the component. The FGA70N30TDTU has a maximum collector current of 70A and a maximum drain-source voltage of 30V. This indicates that it is suitable for applications where a high-power density is required. Additionally, the FGA70N30TDTU has a maximum operational temperature of 175°C and a typical blocking temperature of 130°C. This makes it suitable for applications where high temperatures may be encountered.

Overall, the FGA70N30TDTU is an ideal component for applications where a fast switching IGBT is required. With its high-power density, fast switching speeds, and high temperature ratings, the FGA70N30TDTU is suitable for a wide range of applications. Additionally, the FGA70N30TDTU is manufactured by Fairchild Semiconductor, a leading manufacturer of IGBTs, and is available in a range of package sizes. This makes it an ideal choice for applications where size and power efficiency are paramount.

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