FGB40N6S2 Discrete Semiconductor Products

Power - Max:	290W
Base Part Number:	FGB40N6
Supplier Device Package:	TO-263AB
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	390V, 20A, 3 Ohm, 15V
Td (on/off) @ 25°C:	8ns/35ns
Gate Charge:	35nC
Input Type:	Standard
Switching Energy:	115µJ (on), 195µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 20A
Current - Collector Pulsed (Icm):	180A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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FGB40N6S2 is a type of insulated gate bipolar transistor (IGBT). It has a single base, meaning that it can only provide one conduction path at a time. It is typically used in applications where high power needs to be switched, such as in motor control, power supplies, and power converters. The typical supply voltage of this IGBT type is between 400 and 1000 volts. It has an impressive maximum collector current rating of 40 amperes. Additionally, it is a faster switch than many other bipolar transistors and can typically operate at high frequency levels with a good load response. The FGB40N6S2 IGBT works on a principle of voltage control. It consists of three separate components: a P-type pillar, an N-type pillar, and an insulated gate or floating electrode. The P-type pillar and the N-type pillar are connected in series and separated by a P-N junction. When a voltage is applied to the gate, the electric field formed inverts the P-N junction, so that electrons can move freely between the two layers. During this process, the N-pillar carries current in the opposite direction of the P-pillar. This produces a current flow from the gate, via the N-pillar, to the collector.The insulated gate plays a role in controlling the current. When a positive gate voltage is applied, a large electric field forms between the gate and the P-pillar, allowing electrons to move more freely. This increases the current flow from the gate to the collector. When the gate voltage is made negative, the electric field weakens and the current flow decreases.The FGB40N6S2 IGBT is used in many high power applications as a switch for converting energy between AC and DC, controlling motor speeds, and turning on and off high voltage sources. It has become a staple of many types of industrial and automotive applications due to its high power capacity, fast switching speeds, and reliable operation. The FGB40N6S2 IGBT has a wide range of applications, including DC to AC converters, motor drives, power inverters, home appliances, automotive operations, and magnitude power switching circuits. It is typically found in applications where high power must be switched in a relatively short amount of time, as it has greater switching capabilities than most other power transistors.The FGB40N6S2 IGBT is robust, reliable and easy to work with. It has proven to be a dependable and efficient choice for a variety of modern power control applications. It is a great choice for anyone looking for an efficient and powerful switching solution for their application.

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